The potential of tantalum nitride (Ta-N) films as diffusion barriers for Ag metallization was investigated. The sample films were deposited on silicon substrates by reactive sputtering of Ta under partial nitrogen flow rates varying from 15% to 40%. It was observed from the x-ray diffraction (XRD) analysis and Rutherford backscattering spectroscopy (RBS) that the phases and composition of the sample films were effected by the N 2 flow rate. The results from sheet measurements, XRD, and RBS analysis show that the sample films are thermally stable up to 650°C when annealed for 30 min in vacuum.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering