Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization

Daniel Adams, Gerald F. Malgas, N. David Theodore, Rich Gregory, H. C. Kim, E. Misra, Terry Alford, J. W. Mayer

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The potential of tantalum nitride (Ta-N) films as diffusion barriers for Ag metallization was investigated. The sample films were deposited on silicon substrates by reactive sputtering of Ta under partial nitrogen flow rates varying from 15% to 40%. It was observed from the x-ray diffraction (XRD) analysis and Rutherford backscattering spectroscopy (RBS) that the phases and composition of the sample films were effected by the N 2 flow rate. The results from sheet measurements, XRD, and RBS analysis show that the sample films are thermally stable up to 650°C when annealed for 30 min in vacuum.

Original languageEnglish (US)
Pages (from-to)2345-2352
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number5
DOIs
StatePublished - Sep 1 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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