Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization

Daniel Adams; Gerald F. Malgas; N. David Theodore; Rich Gregory; H. C. Kim; E. Misra; Terry Alford; J. W. Mayer

doi:10.1116/1.1787521

Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization

Daniel Adams, Gerald F. Malgas, N. David Theodore, Rich Gregory, H. C. Kim, E. Misra, Terry Alford, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The potential of tantalum nitride (Ta-N) films as diffusion barriers for Ag metallization was investigated. The sample films were deposited on silicon substrates by reactive sputtering of Ta under partial nitrogen flow rates varying from 15% to 40%. It was observed from the x-ray diffraction (XRD) analysis and Rutherford backscattering spectroscopy (RBS) that the phases and composition of the sample films were effected by the N ₂ flow rate. The results from sheet measurements, XRD, and RBS analysis show that the sample films are thermally stable up to 650°C when annealed for 30 min in vacuum.

Original language	English (US)
Pages (from-to)	2345-2352
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1787521
State	Published - Sep 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization",

abstract = "The potential of tantalum nitride (Ta-N) films as diffusion barriers for Ag metallization was investigated. The sample films were deposited on silicon substrates by reactive sputtering of Ta under partial nitrogen flow rates varying from 15% to 40%. It was observed from the x-ray diffraction (XRD) analysis and Rutherford backscattering spectroscopy (RBS) that the phases and composition of the sample films were effected by the N 2 flow rate. The results from sheet measurements, XRD, and RBS analysis show that the sample films are thermally stable up to 650°C when annealed for 30 min in vacuum.",

author = "Daniel Adams and Malgas, {Gerald F.} and {David Theodore}, N. and Rich Gregory and Kim, {H. C.} and E. Misra and Terry Alford and Mayer, {J. W.}",

note = "Funding Information: The authors would like to acknowledge financial support of the National Research Foundation (South Africa), University of the Western Cape and Arizona State University, (ASU). One of the authors, G.M. is very grateful to the Galvin Chair (ASU) for the financial support they provided during his stay. The authors would also like to thank M. Raymond and C. Happ for technical assistance with preparation of the Ta–N films. The work was partially supported by The National Science Foundation (L. Hess, Grant No. DMR-0308127), to whom the authors are greatly indebted.",

year = "2004",

month = sep,

doi = "10.1116/1.1787521",

language = "English (US)",

volume = "22",

pages = "2345--2352",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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publisher = "AVS Science and Technology Society",

number = "5",

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TY - JOUR

T1 - Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization

AU - Adams, Daniel

AU - Malgas, Gerald F.

AU - David Theodore, N.

AU - Gregory, Rich

AU - Kim, H. C.

AU - Misra, E.

AU - Alford, Terry

AU - Mayer, J. W.

N1 - Funding Information: The authors would like to acknowledge financial support of the National Research Foundation (South Africa), University of the Western Cape and Arizona State University, (ASU). One of the authors, G.M. is very grateful to the Galvin Chair (ASU) for the financial support they provided during his stay. The authors would also like to thank M. Raymond and C. Happ for technical assistance with preparation of the Ta–N films. The work was partially supported by The National Science Foundation (L. Hess, Grant No. DMR-0308127), to whom the authors are greatly indebted.

PY - 2004/9

Y1 - 2004/9

N2 - The potential of tantalum nitride (Ta-N) films as diffusion barriers for Ag metallization was investigated. The sample films were deposited on silicon substrates by reactive sputtering of Ta under partial nitrogen flow rates varying from 15% to 40%. It was observed from the x-ray diffraction (XRD) analysis and Rutherford backscattering spectroscopy (RBS) that the phases and composition of the sample films were effected by the N 2 flow rate. The results from sheet measurements, XRD, and RBS analysis show that the sample films are thermally stable up to 650°C when annealed for 30 min in vacuum.

AB - The potential of tantalum nitride (Ta-N) films as diffusion barriers for Ag metallization was investigated. The sample films were deposited on silicon substrates by reactive sputtering of Ta under partial nitrogen flow rates varying from 15% to 40%. It was observed from the x-ray diffraction (XRD) analysis and Rutherford backscattering spectroscopy (RBS) that the phases and composition of the sample films were effected by the N 2 flow rate. The results from sheet measurements, XRD, and RBS analysis show that the sample films are thermally stable up to 650°C when annealed for 30 min in vacuum.

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ER -

Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization

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