Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

Yeongho Kim; Keun Yong Ban; Allison Boley; David Smith; Christiana Honsberg

doi:10.1063/1.4934695

Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

Yeongho Kim, Keun Yong Ban, Allison Boley, David Smith, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d_s = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d_s due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d_s = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d_s due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d_s = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

Original language	English (US)
Article number	173109
Journal	Applied Physics Letters
Volume	107
Issue number	17
DOIs	https://doi.org/10.1063/1.4934695
State	Published - Oct 26 2015

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4934695

Cite this

@article{1d5c61b5ebd14afa92004f7b67efe6dd,

title = "Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots",

abstract = "The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (ds = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger ds due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with ds = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing ds due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with ds = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.",

author = "Yeongho Kim and Ban, {Keun Yong} and Allison Boley and David Smith and Christiana Honsberg",

year = "2015",

month = oct,

day = "26",

doi = "10.1063/1.4934695",

language = "English (US)",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

AU - Kim, Yeongho

AU - Ban, Keun Yong

AU - Boley, Allison

AU - Smith, David

AU - Honsberg, Christiana

PY - 2015/10/26

Y1 - 2015/10/26

N2 - The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (ds = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger ds due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with ds = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing ds due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with ds = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

AB - The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (ds = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger ds due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with ds = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing ds due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with ds = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

UR - http://www.scopus.com/inward/record.url?scp=84946090408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946090408&partnerID=8YFLogxK

U2 - 10.1063/1.4934695

DO - 10.1063/1.4934695

M3 - Article

AN - SCOPUS:84946090408

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173109

ER -

Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this