Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

Jae Uk Lee; Deuk Hee Lee; Beomjin Kwon; Dow Bin Hyun; Sahn Nahm; Seung Hyub Baek; Jin Sang Kim

doi:10.1007/s11664-014-3598-z

Effect of Sn Doping on the Thermoelectric Properties of n-type Bi₂(Te,Se)₃ Alloys

Jae Uk Lee, Deuk Hee Lee, Beomjin Kwon, Dow Bin Hyun, Sahn Nahm, Seung Hyub Baek, Jin Sang Kim

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In the present work, 0.01–0.05wt.% Sn-doped Bi₂(Te_0.9Se_0.1)₃ alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi₂(Te_0.9Se_0.1)₃ alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 10¹⁹/cm³ to 2.4 × 10¹⁹/cm³ by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

Original language	English (US)
Pages (from-to)	1926-1930
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3598-z
State	Published - Jun 1 2015
Externally published	Yes

Keywords

Bismuth telluride
hot press
mechanical deformation
Sn doping
thermoelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-014-3598-z

Cite this

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title = "Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys",

abstract = "In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.",

keywords = "Bismuth telluride, hot press, mechanical deformation, Sn doping, thermoelectric",

author = "Lee, {Jae Uk} and Lee, {Deuk Hee} and Beomjin Kwon and Hyun, {Dow Bin} and Sahn Nahm and Baek, {Seung Hyub} and Kim, {Jin Sang}",

year = "2015",

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doi = "10.1007/s11664-014-3598-z",

language = "English (US)",

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T1 - Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

AU - Lee, Jae Uk

AU - Lee, Deuk Hee

AU - Kwon, Beomjin

AU - Hyun, Dow Bin

AU - Nahm, Sahn

AU - Baek, Seung Hyub

AU - Kim, Jin Sang

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

AB - In the present work, 0.01–0.05wt.% Sn-doped Bi2(Te0.9Se0.1)3 alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi2(Te0.9Se0.1)3 alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 1019/cm3 to 2.4 × 1019/cm3 by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

KW - Bismuth telluride

KW - hot press

KW - mechanical deformation

KW - Sn doping

KW - thermoelectric

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