Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Engineering & Materials Science

• Proton irradiation 100%
• Oxide semiconductors 68%
• High electron mobility transistors 66%
• Irradiation 44%
• Gate dielectrics 40%
• Metals 36%
• Aluminum oxide 27%
• Protons 17%
• Transconductance 17%
• Leakage currents 15%
• Energy dissipation 12%
• Degradation 10%

Chemical Compounds

• Electron Mobility 68%
• Metal Oxide 47%
• Semiconductor 43%
• Proton 37%
• Energy 27%
• Dielectric Material 16%
• Transconductance 14%
• Leakage Current 12%
• Reduction 8%
• Dose 7%
• Compound Mobility 7%
• Amount 4%

Physics & Astronomy

• proton irradiation 70%
• high electron mobility transistors 59%
• metal oxide semiconductors 58%
• irradiation 22%
• energy 16%
• transconductance 12%
• leakage 9%
• energy dissipation 9%
• saturation 8%
• dosage 7%
• protons 7%
• metals 5%