Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material

S. Bagchi; Stephen Krause; P. R. Roitman; D. K. Sadana

Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material

S. Bagchi, Stephen Krause, P. R. Roitman, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In SIMOX (separation by implantation of oxygen) material processing, understanding the formation of buried-oxide (BOX) and the effect of processing parameters is critical to achieving high quality. It has been observed that preamorphization of the as-implanted region prior to annealing extends the lower dose limit at which a continuous BOX forms during annealing. Microstructural studies of the BOX for untreated and post-amorphized implant low-dose SIMOX show two mechanisms behind this observation: elimination of multiply faulted defects as a site for the preferred nucleation and growth of oxides which form an upper layer of precipitates in the untreated material; and rapid O diffusion toward a central region of BOX formation.

Original language	English (US)
Title of host publication	IEEE International SOI Conference
Editors	Anon
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	47-48
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: Oct 5 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 IEEE International SOI Conference
City	Stuart, FL, USA
Period	10/5/98 → 10/8/98

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{6f89cb54dbe74fd985f30286052075e7,

title = "Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material",

abstract = "In SIMOX (separation by implantation of oxygen) material processing, understanding the formation of buried-oxide (BOX) and the effect of processing parameters is critical to achieving high quality. It has been observed that preamorphization of the as-implanted region prior to annealing extends the lower dose limit at which a continuous BOX forms during annealing. Microstructural studies of the BOX for untreated and post-amorphized implant low-dose SIMOX show two mechanisms behind this observation: elimination of multiply faulted defects as a site for the preferred nucleation and growth of oxides which form an upper layer of precipitates in the untreated material; and rapid O diffusion toward a central region of BOX formation.",

author = "S. Bagchi and Stephen Krause and Roitman, {P. R.} and Sadana, {D. K.}",

year = "1998",

language = "English (US)",

pages = "47--48",

editor = "Anon",

booktitle = "IEEE International SOI Conference",

publisher = "IEEE",

note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

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TY - GEN

T1 - Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material

AU - Bagchi, S.

AU - Krause, Stephen

AU - Roitman, P. R.

AU - Sadana, D. K.

PY - 1998

Y1 - 1998

N2 - In SIMOX (separation by implantation of oxygen) material processing, understanding the formation of buried-oxide (BOX) and the effect of processing parameters is critical to achieving high quality. It has been observed that preamorphization of the as-implanted region prior to annealing extends the lower dose limit at which a continuous BOX forms during annealing. Microstructural studies of the BOX for untreated and post-amorphized implant low-dose SIMOX show two mechanisms behind this observation: elimination of multiply faulted defects as a site for the preferred nucleation and growth of oxides which form an upper layer of precipitates in the untreated material; and rapid O diffusion toward a central region of BOX formation.

AB - In SIMOX (separation by implantation of oxygen) material processing, understanding the formation of buried-oxide (BOX) and the effect of processing parameters is critical to achieving high quality. It has been observed that preamorphization of the as-implanted region prior to annealing extends the lower dose limit at which a continuous BOX forms during annealing. Microstructural studies of the BOX for untreated and post-amorphized implant low-dose SIMOX show two mechanisms behind this observation: elimination of multiply faulted defects as a site for the preferred nucleation and growth of oxides which form an upper layer of precipitates in the untreated material; and rapid O diffusion toward a central region of BOX formation.

UR - http://www.scopus.com/inward/record.url?scp=0032320077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032320077&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032320077

SP - 47

EP - 48

BT - IEEE International SOI Conference

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 IEEE International SOI Conference

Y2 - 5 October 1998 through 8 October 1998

ER -

Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material

Abstract

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ASJC Scopus subject areas

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