Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material

S. Bagchi, Stephen Krause, P. R. Roitman, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In SIMOX (separation by implantation of oxygen) material processing, understanding the formation of buried-oxide (BOX) and the effect of processing parameters is critical to achieving high quality. It has been observed that preamorphization of the as-implanted region prior to annealing extends the lower dose limit at which a continuous BOX forms during annealing. Microstructural studies of the BOX for untreated and post-amorphized implant low-dose SIMOX show two mechanisms behind this observation: elimination of multiply faulted defects as a site for the preferred nucleation and growth of oxides which form an upper layer of precipitates in the untreated material; and rapid O diffusion toward a central region of BOX formation.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages47-48
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA
Duration: Oct 5 1998Oct 8 1998

Other

OtherProceedings of the 1998 IEEE International SOI Conference
CityStuart, FL, USA
Period10/5/9810/8/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bagchi, S., Krause, S., Roitman, P. R., & Sadana, D. K. (1998). Effect of post-implantation amorphization on microstructural development of the buried oxide layer in low-dose SIMOX material. In Anon (Ed.), IEEE International SOI Conference (pp. 47-48). IEEE.