Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. J. Liu, V. Avrutin, S. Okur, F. Zhang, Ü Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, David Smith, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Semipolar (1 -101) GaN layers were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. The effects of reactor pressure and substrate temperature on optical properties of (1 -101) GaN were studied by steadystate and time-resolved photoluminescence. The optical measurements revealed that the optical quality of (1 -101)- oriented GaN is comparable to that of c-plane GaN film grown on sapphire. Slow decay time constants, representative of the radiative recombination, for semipolar (1-101)GaN grown at 200 Torr are found to be very long (~1.8 ns), comparable to those for the state-of-art c-plane GaN templates grown using in situ epitaxial lateral overgrowth through silicon nitride nano-network. Defect distribution in the GaN stripes was studied by spatially resolved cathodeluminescence measurements. The c +-wing regions of the GaN stripes were found to be dominated by a (D 0,X) emission. Only a thin slice of emission around 3.42 eV related to basal stacking faults was revealed in c --wing regions.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VII
DOIs
StatePublished - Apr 16 2012
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: Jan 23 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8262
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices VII
CountryUnited States
CitySan Francisco, CA
Period1/23/121/26/12

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Keywords

  • MOCVD
  • Si
  • nitride
  • semipolar GaN
  • time-resolved photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Izyumskaya, N., Liu, S. J., Avrutin, V., Okur, S., Zhang, F., Özgür, Ü., Metzner, S., Karbaum, C., Bertram, F., Christen, J., Smith, D., & Morkoç, H. (2012). Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates. In Gallium Nitride Materials and Devices VII [826224] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262). https://doi.org/10.1117/12.909235