@inproceedings{9d4f535d26b4484bbf2fdfa629cf3ac1,
title = "Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates",
abstract = "Semipolar (1 -101) GaN layers were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. The effects of reactor pressure and substrate temperature on optical properties of (1 -101) GaN were studied by steadystate and time-resolved photoluminescence. The optical measurements revealed that the optical quality of (1 -101)- oriented GaN is comparable to that of c-plane GaN film grown on sapphire. Slow decay time constants, representative of the radiative recombination, for semipolar (1-101)GaN grown at 200 Torr are found to be very long (~1.8 ns), comparable to those for the state-of-art c-plane GaN templates grown using in situ epitaxial lateral overgrowth through silicon nitride nano-network. Defect distribution in the GaN stripes was studied by spatially resolved cathodeluminescence measurements. The c +-wing regions of the GaN stripes were found to be dominated by a (D 0,X) emission. Only a thin slice of emission around 3.42 eV related to basal stacking faults was revealed in c --wing regions.",
keywords = "MOCVD, Si, nitride, semipolar GaN, time-resolved photoluminescence",
author = "N. Izyumskaya and Liu, {S. J.} and V. Avrutin and S. Okur and F. Zhang and {\"U} {\"O}zg{\"u}r and S. Metzner and C. Karbaum and F. Bertram and J. Christen and David Smith and H. Morko{\c c}",
year = "2012",
doi = "10.1117/12.909235",
language = "English (US)",
isbn = "9780819489050",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VII",
note = "Gallium Nitride Materials and Devices VII ; Conference date: 23-01-2012 Through 26-01-2012",
}