### Abstract

Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage. This is particularly important for hexagonal SiC, in which current- or process-induced cubic inclusions are known to behave as electron QWs. These calculations naturally explain the surprisingly large effect of cubic inclusions on the apparent 4H-SiC Schottky barrier determined by C-V measurements, and together with the measured C-V data indicate the QW subband energy in the inclusions to be ~0.51 eV below the host 4H-SiC conduction band.

Original language | English (US) |
---|---|

Article number | 222109 |

Pages (from-to) | 1-3 |

Number of pages | 3 |

Journal | Applied Physics Letters |

Volume | 86 |

Issue number | 22 |

DOIs | |

State | Published - 2005 |

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### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

### Cite this

*Applied Physics Letters*,

*86*(22), 1-3. [222109]. https://doi.org/10.1063/1.1935757

**Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts : Cubic inclusions in hexagonal SiC.** / Park, K. B.; Ding, Y.; Pelz, J. P.; Mikhov, M. K.; Wang, Y.; Skromme, Brian.

Research output: Contribution to journal › Article

*Applied Physics Letters*, vol. 86, no. 22, 222109, pp. 1-3. https://doi.org/10.1063/1.1935757

}

TY - JOUR

T1 - Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts

T2 - Cubic inclusions in hexagonal SiC

AU - Park, K. B.

AU - Ding, Y.

AU - Pelz, J. P.

AU - Mikhov, M. K.

AU - Wang, Y.

AU - Skromme, Brian

PY - 2005

Y1 - 2005

N2 - Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage. This is particularly important for hexagonal SiC, in which current- or process-induced cubic inclusions are known to behave as electron QWs. These calculations naturally explain the surprisingly large effect of cubic inclusions on the apparent 4H-SiC Schottky barrier determined by C-V measurements, and together with the measured C-V data indicate the QW subband energy in the inclusions to be ~0.51 eV below the host 4H-SiC conduction band.

AB - Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage. This is particularly important for hexagonal SiC, in which current- or process-induced cubic inclusions are known to behave as electron QWs. These calculations naturally explain the surprisingly large effect of cubic inclusions on the apparent 4H-SiC Schottky barrier determined by C-V measurements, and together with the measured C-V data indicate the QW subband energy in the inclusions to be ~0.51 eV below the host 4H-SiC conduction band.

UR - http://www.scopus.com/inward/record.url?scp=20844455721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844455721&partnerID=8YFLogxK

U2 - 10.1063/1.1935757

DO - 10.1063/1.1935757

M3 - Article

AN - SCOPUS:20844455721

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222109

ER -