Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

K. B. Park, Y. Ding, J. P. Pelz, M. K. Mikhov, Y. Wang, Brian Skromme

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage. This is particularly important for hexagonal SiC, in which current- or process-induced cubic inclusions are known to behave as electron QWs. These calculations naturally explain the surprisingly large effect of cubic inclusions on the apparent 4H-SiC Schottky barrier determined by C-V measurements, and together with the measured C-V data indicate the QW subband energy in the inclusions to be ~0.51 eV below the host 4H-SiC conduction band.

Original languageEnglish (US)
Article number222109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number22
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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