Abstract

The CuPt ordering of the group III elements in Ga x In 1-x P (x ≃ 0.5) has been observed to vary during growth by metalorganic vapor-phase epitaxy of InAs quantum dots capped with GaAs in a GaInP matrix. While ordering is not affected by the insertion of a GaAs layer, the growth of InAs quantum dots capped with GaAs results in ordered, partially ordered, or fully disordered GaInP. We show that the degree of ordering depends on the deposition time of the InAs quantum dots and on the thickness of the GaAs capping layer. Our results indicate that disordered GaInP occurs in the presence of excess indium at the growth surface, which results from the growth of strained InAs quantum dots. Ordering resumes when the excess indium is consumed. Cathodoluminescence, scanning transmission electron microscopy, and atomic force microscopy are used in this study to correlate the electronic properties and the microstructure of the thin films.

Original languageEnglish (US)
Article number053104
JournalJournal of Applied Physics
Volume125
Issue number5
DOIs
StatePublished - Feb 7 2019

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quantum dots
indium
cathodoluminescence
vapor phase epitaxy
insertion
atomic force microscopy
transmission electron microscopy
microstructure
scanning electron microscopy
matrices
thin films
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga 0.5 In 0.5 P . / Su, P. Y.; Liu, H.; Kawabata, R. M.S.; Weiner, E. C.; Jakomin, R.; Pires, M. P.; King, Richard; Souza, P. L.; Ponce, Fernando.

In: Journal of Applied Physics, Vol. 125, No. 5, 053104, 07.02.2019.

Research output: Contribution to journalArticle

Su, PY, Liu, H, Kawabata, RMS, Weiner, EC, Jakomin, R, Pires, MP, King, R, Souza, PL & Ponce, F 2019, ' Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga 0.5 In 0.5 P ', Journal of Applied Physics, vol. 125, no. 5, 053104. https://doi.org/10.1063/1.5063941
Su, P. Y. ; Liu, H. ; Kawabata, R. M.S. ; Weiner, E. C. ; Jakomin, R. ; Pires, M. P. ; King, Richard ; Souza, P. L. ; Ponce, Fernando. / Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga 0.5 In 0.5 P In: Journal of Applied Physics. 2019 ; Vol. 125, No. 5.
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abstract = "The CuPt ordering of the group III elements in Ga x In 1-x P (x ≃ 0.5) has been observed to vary during growth by metalorganic vapor-phase epitaxy of InAs quantum dots capped with GaAs in a GaInP matrix. While ordering is not affected by the insertion of a GaAs layer, the growth of InAs quantum dots capped with GaAs results in ordered, partially ordered, or fully disordered GaInP. We show that the degree of ordering depends on the deposition time of the InAs quantum dots and on the thickness of the GaAs capping layer. Our results indicate that disordered GaInP occurs in the presence of excess indium at the growth surface, which results from the growth of strained InAs quantum dots. Ordering resumes when the excess indium is consumed. Cathodoluminescence, scanning transmission electron microscopy, and atomic force microscopy are used in this study to correlate the electronic properties and the microstructure of the thin films.",
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AU - Su, P. Y.

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AU - Kawabata, R. M.S.

AU - Weiner, E. C.

AU - Jakomin, R.

AU - Pires, M. P.

AU - King, Richard

AU - Souza, P. L.

AU - Ponce, Fernando

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