Effect of hole-localization mechanisms on photoluminescence spectra of two-dimensional-electron-gas systems

Yong-Hang Zhang, N. N. Ledentsov, K. Ploog

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Optical spectroscopy on a series of n-type modulation-doped Ga0.47In0.53As/Al0.48In0.52As single quantum wells reveals that the Fermi-edge singularity in luminescence occurs only if localization of photogenerated holes leads to positively charged centers. If the hole localization yields electrically neutral centers, no intensity enhancement of the luminescence near the Fermi edge is observed. The different nature of the hole-localization mechanisms consistently explains previous discrepancies in both the low-temperature luminescence and absorption spectra of the two-dimensional electron gas in Si metal-oxide-semiconductors field-effects transistors as well as in modulation-doped GaAs/AlxGa1-xAs, GaxIn1-xAs/InP, and GaxIn1-xAs/AlyIn-yAs quantum wells and heterostructures.

Original languageEnglish (US)
Pages (from-to)1399-1402
Number of pages4
JournalPhysical Review B
Volume44
Issue number3
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

Two dimensional electron gas
electron gas
Luminescence
Photoluminescence
luminescence
photoluminescence
Semiconductor quantum wells
Modulation
quantum wells
modulation
MOSFET devices
metal oxide semiconductors
Heterojunctions
Absorption spectra
field effect transistors
absorption spectra
augmentation
spectroscopy
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effect of hole-localization mechanisms on photoluminescence spectra of two-dimensional-electron-gas systems. / Zhang, Yong-Hang; Ledentsov, N. N.; Ploog, K.

In: Physical Review B, Vol. 44, No. 3, 1991, p. 1399-1402.

Research output: Contribution to journalArticle

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