Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

Alec M. Fischer, Kewei W. Sun, Reid Juday, Fernando Ponce, Jae Hyun Ryou, Hee Jin Kim, Suk Choi, Seong Soo Kim, Russell D. Dupuis

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Abstract

InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 °C exhibit significant variations in the quantum well emission characteristics, with 780 °C producing the highest emission efficiency. Three- and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer.

Original languageEnglish (US)
Article number031003
JournalApplied Physics Express
Volume3
Issue number3
DOIs
StatePublished - Mar 1 2010

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fischer, A. M., Sun, K. W., Juday, R., Ponce, F., Ryou, J. H., Kim, H. J., Choi, S., Kim, S. S., & Dupuis, R. D. (2010). Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes. Applied Physics Express, 3(3), [031003]. https://doi.org/10.1143/APEX.3.031003