Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

Alec M. Fischer; Kewei W. Sun; Reid Juday; Fernando Ponce; Jae Hyun Ryou; Hee Jin Kim; Suk Choi; Seong Soo Kim; Russell D. Dupuis

doi:10.1143/APEX.3.031003

Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

Alec M. Fischer, Kewei W. Sun, Reid Juday, Fernando Ponce, Jae Hyun Ryou, Hee Jin Kim, Suk Choi, Seong Soo Kim, Russell D. Dupuis

Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 °C exhibit significant variations in the quantum well emission characteristics, with 780 °C producing the highest emission efficiency. Three- and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer.

Original language	English (US)
Article number	031003
Journal	Applied Physics Express
Volume	3
Issue number	3
DOIs	https://doi.org/10.1143/APEX.3.031003
State	Published - Mar 1 2010

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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@article{398da579120449a3a4497a308e861f5c,

title = "Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes",

abstract = "InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 °C exhibit significant variations in the quantum well emission characteristics, with 780 °C producing the highest emission efficiency. Three- and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer.",

author = "Fischer, {Alec M.} and Sun, {Kewei W.} and Reid Juday and Fernando Ponce and Ryou, {Jae Hyun} and Kim, {Hee Jin} and Suk Choi and Kim, {Seong Soo} and Dupuis, {Russell D.}",

year = "2010",

month = mar,

day = "1",

doi = "10.1143/APEX.3.031003",

language = "English (US)",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

AU - Fischer, Alec M.

AU - Sun, Kewei W.

AU - Juday, Reid

AU - Ponce, Fernando

AU - Ryou, Jae Hyun

AU - Kim, Hee Jin

AU - Choi, Suk

AU - Kim, Seong Soo

AU - Dupuis, Russell D.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 °C exhibit significant variations in the quantum well emission characteristics, with 780 °C producing the highest emission efficiency. Three- and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer.

AB - InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 °C exhibit significant variations in the quantum well emission characteristics, with 780 °C producing the highest emission efficiency. Three- and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer.

UR - http://www.scopus.com/inward/record.url?scp=77949804613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949804613&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.031003

DO - 10.1143/APEX.3.031003

M3 - Article

AN - SCOPUS:77949804613

SN - 1882-0778

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

IS - 3

M1 - 031003

ER -

Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

Abstract

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