Effect of growth conditions on structural and electrical properties of Pb(ZrxTi1-x)O3 layers grown by peroxide MBE

N. Izyumskaya, V. Avrutin, X. Gu, B. Xiao, S. Chevtchenko, Lin Zhou, David Smith, J. G. Yoon, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Pb(ZrxTi1-x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.

Original languageEnglish (US)
Title of host publicationFerroelectrics, Multiferroics, and Magnetoelectrics
Number of pages6
StatePublished - Dec 1 2008
Event2007 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 26 2007Nov 30 2007

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2007 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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