TY - GEN
T1 - Effect of growth conditions on structural and electrical properties of Pb(ZrxTi1-x)O3 layers grown by peroxide MBE
AU - Izyumskaya, N.
AU - Avrutin, V.
AU - Gu, X.
AU - Xiao, B.
AU - Chevtchenko, S.
AU - Zhou, Lin
AU - Smith, David
AU - Yoon, J. G.
AU - Morkoc, H.
PY - 2008
Y1 - 2008
N2 - Pb(ZrxTi1-x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.
AB - Pb(ZrxTi1-x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.
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M3 - Conference contribution
AN - SCOPUS:70350333898
SN - 9781605608297
T3 - Materials Research Society Symposium Proceedings
SP - 32
EP - 37
BT - Ferroelectrics, Multiferroics, and Magnetoelectrics
T2 - 2007 MRS Fall Meeting
Y2 - 26 November 2007 through 30 November 2007
ER -