Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films

R. Gandikota; Rakesh Singh; J. Kim; B. Wilkens; Nathan Newman; J. M. Rowell; A. V. Pogrebnyakov; X. X. Xi; J. M. Redwing; S. Y. Xu; Q. Li; B. H. Moeckly

doi:10.1063/1.2012524

Effect of damage by 2 MeV He ions and annealing on H _c2 in MgB ₂ thin films

R. Gandikota, Rakesh Singh, J. Kim, B. Wilkens, Nathan Newman, J. M. Rowell, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, S. Y. Xu, Q. Li, B. H. Moeckly

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

Original language	English (US)
Article number	072507
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.2012524
State	Published - Aug 15 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2012524

Cite this

@article{f999b68550324a6d88a821260591e9fa,

title = "Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films",

abstract = "The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.",

author = "R. Gandikota and Rakesh Singh and J. Kim and B. Wilkens and Nathan Newman and Rowell, {J. M.} and Pogrebnyakov, {A. V.} and Xi, {X. X.} and Redwing, {J. M.} and Xu, {S. Y.} and Q. Li and Moeckly, {B. H.}",

note = "Funding Information: The work at ASU was supported by ONR under Grant No. N00014-02-1-0002. The authors acknowledge use of facilities in the Center for Solid State Science at ASU. The work at Penn State was supported by ONR under Grant Nos. N00014-00-1-0294 (X.X.X.) and N0014-01-1-0006 (J.M.Re.), and by the NSF under Grant Nos. DMR-0405502 (Q.L.), and DMR-0306746 (X.X.X. and J.M.Re.).",

year = "2005",

month = aug,

day = "15",

doi = "10.1063/1.2012524",

language = "English (US)",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films

AU - Gandikota, R.

AU - Singh, Rakesh

AU - Kim, J.

AU - Wilkens, B.

AU - Newman, Nathan

AU - Rowell, J. M.

AU - Pogrebnyakov, A. V.

AU - Xi, X. X.

AU - Redwing, J. M.

AU - Xu, S. Y.

AU - Li, Q.

AU - Moeckly, B. H.

N1 - Funding Information: The work at ASU was supported by ONR under Grant No. N00014-02-1-0002. The authors acknowledge use of facilities in the Center for Solid State Science at ASU. The work at Penn State was supported by ONR under Grant Nos. N00014-00-1-0294 (X.X.X.) and N0014-01-1-0006 (J.M.Re.), and by the NSF under Grant Nos. DMR-0405502 (Q.L.), and DMR-0306746 (X.X.X. and J.M.Re.).

PY - 2005/8/15

Y1 - 2005/8/15

N2 - The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

AB - The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

UR - http://www.scopus.com/inward/record.url?scp=24144448996&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24144448996&partnerID=8YFLogxK

U2 - 10.1063/1.2012524

DO - 10.1063/1.2012524

M3 - Article

AN - SCOPUS:24144448996

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072507

ER -

Effect of damage by 2 MeV He ions and annealing on H _c2 in MgB ₂ thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this