Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films

R. Gandikota, Rakesh Singh, J. Kim, B. Wilkens, Nathan Newman, J. M. Rowell, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, S. Y. Xu, Q. Li, B. H. Moeckly

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Abstract

The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

Original languageEnglish (US)
Article number072507
JournalApplied Physics Letters
Volume87
Issue number7
DOIs
StatePublished - Aug 15 2005

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damage
annealing
thin films
ions
electrical resistivity
alpha particles
critical temperature
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gandikota, R., Singh, R., Kim, J., Wilkens, B., Newman, N., Rowell, J. M., ... Moeckly, B. H. (2005). Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films. Applied Physics Letters, 87(7), [072507]. https://doi.org/10.1063/1.2012524

Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films. / Gandikota, R.; Singh, Rakesh; Kim, J.; Wilkens, B.; Newman, Nathan; Rowell, J. M.; Pogrebnyakov, A. V.; Xi, X. X.; Redwing, J. M.; Xu, S. Y.; Li, Q.; Moeckly, B. H.

In: Applied Physics Letters, Vol. 87, No. 7, 072507, 15.08.2005.

Research output: Contribution to journalArticle

Gandikota, R, Singh, R, Kim, J, Wilkens, B, Newman, N, Rowell, JM, Pogrebnyakov, AV, Xi, XX, Redwing, JM, Xu, SY, Li, Q & Moeckly, BH 2005, 'Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films', Applied Physics Letters, vol. 87, no. 7, 072507. https://doi.org/10.1063/1.2012524
Gandikota, R. ; Singh, Rakesh ; Kim, J. ; Wilkens, B. ; Newman, Nathan ; Rowell, J. M. ; Pogrebnyakov, A. V. ; Xi, X. X. ; Redwing, J. M. ; Xu, S. Y. ; Li, Q. ; Moeckly, B. H. / Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films. In: Applied Physics Letters. 2005 ; Vol. 87, No. 7.
@article{f999b68550324a6d88a821260591e9fa,
title = "Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films",
abstract = "The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.",
author = "R. Gandikota and Rakesh Singh and J. Kim and B. Wilkens and Nathan Newman and Rowell, {J. M.} and Pogrebnyakov, {A. V.} and Xi, {X. X.} and Redwing, {J. M.} and Xu, {S. Y.} and Q. Li and Moeckly, {B. H.}",
year = "2005",
month = "8",
day = "15",
doi = "10.1063/1.2012524",
language = "English (US)",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films

AU - Gandikota, R.

AU - Singh, Rakesh

AU - Kim, J.

AU - Wilkens, B.

AU - Newman, Nathan

AU - Rowell, J. M.

AU - Pogrebnyakov, A. V.

AU - Xi, X. X.

AU - Redwing, J. M.

AU - Xu, S. Y.

AU - Li, Q.

AU - Moeckly, B. H.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

AB - The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

UR - http://www.scopus.com/inward/record.url?scp=24144448996&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24144448996&partnerID=8YFLogxK

U2 - 10.1063/1.2012524

DO - 10.1063/1.2012524

M3 - Article

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 072507

ER -