Effect of composition on phase formation and morphology in Ti-Si1-xGex solid phase reactions

D. B. Aldrich; Y. L. Chen; D. E. Sayers; R. J. Nemanich; S. P. Ashburn; M. C. Öztürk

doi:10.1557/JMR.1995.2849

Effect of composition on phase formation and morphology in Ti-Si_1-xGe_x solid phase reactions

D. B. Aldrich, Y. L. Chen, D. E. Sayers, R. J. Nemanich, S. P. Ashburn, M. C. Öztürk

Research output: Contribution to journal › Article › peer-review

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Abstract

The effects of Si_1-xGe_x alloy composition on the Ti-Si_1-xGe_x solid phase reaction have been examined. Specifically, effects on the titanium germanosilicide phase formation sequence, C54 Ti(Si₁-_yGe_y)₂ nucleation temperature, and C54 Ti(Si₁-_yGe_y)₂ morphology were examined. It was determined that the Ti-Si_1-xGe_x reaction follows a “Ti-Si-like” reaction path for Si-rich Si_1-xGe_x alloys and follows a “Ti-Ge-like” reaction path for Ge-rich Si_1-xGe_x alloys. The coexistence of multiple titanium germanosilicide phases was observed during Ti-Si_1-xGe_x reactions for Si_1-xGe_x alloys in an intermediate composition range. The morphology and stability of the resulting C54 germanosilicides were directly correlated to the Ti-Si_1-xGe_x reaction path. Smooth continuous C54 titanium germanosilicide was formed for samples with Si_1-xGe_x compositions in the “Ti-Si-like” regime. Discontinuous islanded C54 germanosilicides were formed for samples with Si_1-xGe_x compositions in the mixed phase and “Ti-Ge-like” regimes. Using rapid thermal annealing techniques, it was found that the C54 titanium germanosilicides were stable to higher temperatures. This indicated that the morphological degradation occurs after C54 phase formation. The C54 Ti(Si_1-xGe_x)₂ formation temperature was examined as a function of alloy composition and was found to decrease by ≈70 °C as the composition approached ⃣ ≈ 0.5. An optimum Si_1-xGe_x alloy composition range of 0 ≤ ⃣ ≤ 0.36 was determined for the formation of stable-continuous-low-resistivity-C54 titanium germanosilicide films from the solid phase reaction of Ti and Si_1-xGe_x alloy. The results were described in terms of the relevant nucleation processes.

Original language	English (US)
Pages (from-to)	2849-2863
Number of pages	15
Journal	Journal of Materials Research
Volume	10
Issue number	11
DOIs	https://doi.org/10.1557/JMR.1995.2849
State	Published - Nov 1995
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{c540fb1f6ceb454b9328adf17e2e9c68,

title = "Effect of composition on phase formation and morphology in Ti-Si1-xGex solid phase reactions",

abstract = "The effects of Si1-xGex alloy composition on the Ti-Si1-xGex solid phase reaction have been examined. Specifically, effects on the titanium germanosilicide phase formation sequence, C54 Ti(Si1-yGey)2 nucleation temperature, and C54 Ti(Si1-yGey)2 morphology were examined. It was determined that the Ti-Si1-xGex reaction follows a “Ti-Si-like” reaction path for Si-rich Si1-xGex alloys and follows a “Ti-Ge-like” reaction path for Ge-rich Si1-xGex alloys. The coexistence of multiple titanium germanosilicide phases was observed during Ti-Si1-xGex reactions for Si1-xGex alloys in an intermediate composition range. The morphology and stability of the resulting C54 germanosilicides were directly correlated to the Ti-Si1-xGex reaction path. Smooth continuous C54 titanium germanosilicide was formed for samples with Si1-xGex compositions in the “Ti-Si-like” regime. Discontinuous islanded C54 germanosilicides were formed for samples with Si1-xGex compositions in the mixed phase and “Ti-Ge-like” regimes. Using rapid thermal annealing techniques, it was found that the C54 titanium germanosilicides were stable to higher temperatures. This indicated that the morphological degradation occurs after C54 phase formation. The C54 Ti(Si1-xGex)2 formation temperature was examined as a function of alloy composition and was found to decrease by ≈70 °C as the composition approached ⃣ ≈ 0.5. An optimum Si1-xGex alloy composition range of 0 ≤ ⃣ ≤ 0.36 was determined for the formation of stable-continuous-low-resistivity-C54 titanium germanosilicide films from the solid phase reaction of Ti and Si1-xGex alloy. The results were described in terms of the relevant nucleation processes.",

author = "Aldrich, {D. B.} and Chen, {Y. L.} and Sayers, {D. E.} and Nemanich, {R. J.} and Ashburn, {S. P.} and {\"O}zt{\"u}rk, {M. C.}",

note = "Funding Information: The authors would like to thank Y. Dao and Z. Wang for their assistance in data collection and for insightful scientific discussions. This work was supported in part by the National Science Foundation through Grant DMR 9204285 and by the Division of Materials Science of the Department of Energy under Contract DE-FG05-89ER45384.",

year = "1995",

month = nov,

doi = "10.1557/JMR.1995.2849",

language = "English (US)",

volume = "10",

pages = "2849--2863",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "11",

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TY - JOUR

T1 - Effect of composition on phase formation and morphology in Ti-Si1-xGex solid phase reactions

AU - Aldrich, D. B.

AU - Chen, Y. L.

AU - Sayers, D. E.

AU - Nemanich, R. J.

AU - Ashburn, S. P.

AU - Öztürk, M. C.

N1 - Funding Information: The authors would like to thank Y. Dao and Z. Wang for their assistance in data collection and for insightful scientific discussions. This work was supported in part by the National Science Foundation through Grant DMR 9204285 and by the Division of Materials Science of the Department of Energy under Contract DE-FG05-89ER45384.

PY - 1995/11

Y1 - 1995/11

N2 - The effects of Si1-xGex alloy composition on the Ti-Si1-xGex solid phase reaction have been examined. Specifically, effects on the titanium germanosilicide phase formation sequence, C54 Ti(Si1-yGey)2 nucleation temperature, and C54 Ti(Si1-yGey)2 morphology were examined. It was determined that the Ti-Si1-xGex reaction follows a “Ti-Si-like” reaction path for Si-rich Si1-xGex alloys and follows a “Ti-Ge-like” reaction path for Ge-rich Si1-xGex alloys. The coexistence of multiple titanium germanosilicide phases was observed during Ti-Si1-xGex reactions for Si1-xGex alloys in an intermediate composition range. The morphology and stability of the resulting C54 germanosilicides were directly correlated to the Ti-Si1-xGex reaction path. Smooth continuous C54 titanium germanosilicide was formed for samples with Si1-xGex compositions in the “Ti-Si-like” regime. Discontinuous islanded C54 germanosilicides were formed for samples with Si1-xGex compositions in the mixed phase and “Ti-Ge-like” regimes. Using rapid thermal annealing techniques, it was found that the C54 titanium germanosilicides were stable to higher temperatures. This indicated that the morphological degradation occurs after C54 phase formation. The C54 Ti(Si1-xGex)2 formation temperature was examined as a function of alloy composition and was found to decrease by ≈70 °C as the composition approached ⃣ ≈ 0.5. An optimum Si1-xGex alloy composition range of 0 ≤ ⃣ ≤ 0.36 was determined for the formation of stable-continuous-low-resistivity-C54 titanium germanosilicide films from the solid phase reaction of Ti and Si1-xGex alloy. The results were described in terms of the relevant nucleation processes.

AB - The effects of Si1-xGex alloy composition on the Ti-Si1-xGex solid phase reaction have been examined. Specifically, effects on the titanium germanosilicide phase formation sequence, C54 Ti(Si1-yGey)2 nucleation temperature, and C54 Ti(Si1-yGey)2 morphology were examined. It was determined that the Ti-Si1-xGex reaction follows a “Ti-Si-like” reaction path for Si-rich Si1-xGex alloys and follows a “Ti-Ge-like” reaction path for Ge-rich Si1-xGex alloys. The coexistence of multiple titanium germanosilicide phases was observed during Ti-Si1-xGex reactions for Si1-xGex alloys in an intermediate composition range. The morphology and stability of the resulting C54 germanosilicides were directly correlated to the Ti-Si1-xGex reaction path. Smooth continuous C54 titanium germanosilicide was formed for samples with Si1-xGex compositions in the “Ti-Si-like” regime. Discontinuous islanded C54 germanosilicides were formed for samples with Si1-xGex compositions in the mixed phase and “Ti-Ge-like” regimes. Using rapid thermal annealing techniques, it was found that the C54 titanium germanosilicides were stable to higher temperatures. This indicated that the morphological degradation occurs after C54 phase formation. The C54 Ti(Si1-xGex)2 formation temperature was examined as a function of alloy composition and was found to decrease by ≈70 °C as the composition approached ⃣ ≈ 0.5. An optimum Si1-xGex alloy composition range of 0 ≤ ⃣ ≤ 0.36 was determined for the formation of stable-continuous-low-resistivity-C54 titanium germanosilicide films from the solid phase reaction of Ti and Si1-xGex alloy. The results were described in terms of the relevant nucleation processes.

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JO - Journal of Materials Research

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Effect of composition on phase formation and morphology in Ti-Si_1-xGe_x solid phase reactions

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