Effect of a Se monolayer on interface properties between AL 2O3 and N-type Si(100)

G. Larrieu, G. Song, N. Moumen, E. Maldonado, W. P. Kirk, M. Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An in-situ high-vacuum process has been developed for the preparation of ultrathin Al2O3 films on monolayer Se passivated Si(100) surface. The in-situ high-vacuum process prevents the Si surface from adsorbed moisture or native oxide, leading to an Al2O3/Si(100) interface without any low-k interfacial layer at 400°C. The Se monolayer terminates the dangling bonds on Si(100) before the formation of the high-k dielectric. The electrical properties of the Al2O3 film on Se passivated Si(100) are significantly improved in comparison to control samples without Se passivation. The interface trap density is about 5 times lower to 2×1011 eV-1/cm2. The C-V hysteresis is reduced to 80 mV from 160 mV. The leakage current for the same physical dielectric thickness is reduced by more than an order of magnitude. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Gate Dielectrics III
PublisherElectrochemical Society Inc.
Pages371-379
Number of pages9
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2006
Externally publishedYes
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number5
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

ASJC Scopus subject areas

  • Engineering(all)

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