Effect of a Se monolayer on interface properties between AL 2O 3 and N-type Si(100)

G. Larrieu, G. Song, N. Moumen, E. Maldonado, W. P. Kirk, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An in-situ high-vacuum process has been developed for the preparation of ultrathin Al 2O 3 films on monolayer Se passivated Si(100) surface. The in-situ high-vacuum process prevents the Si surface from adsorbed moisture or native oxide, leading to an Al 2O 3/Si(100) interface without any low-k interfacial layer at 400°C. The Se monolayer terminates the dangling bonds on Si(100) before the formation of the high-k dielectric. The electrical properties of the Al 2O 3 film on Se passivated Si(100) are significantly improved in comparison to control samples without Se passivation. The interface trap density is about 5 times lower to 2×10 11 eV -1/cm 2. The C-V hysteresis is reduced to 80 mV from 160 mV. The leakage current for the same physical dielectric thickness is reduced by more than an order of magnitude. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages371-379
Number of pages9
Volume1
Edition5
DOIs
StatePublished - 2005
Externally publishedYes
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
CountryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Effect of a Se monolayer on interface properties between AL <sub>2</sub>O <sub>3</sub> and N-type Si(100)'. Together they form a unique fingerprint.

Cite this