Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE

G. Torelly, R. Jakomin, L. D. Pinto, M. P. Pires, J. Ruiz, P. G. Caldas, R. Prioli, H. Xie, Fernando Ponce, P. L. Souza

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

An investigation of ultra-thin InAs layers deposited on GaAs is carried out combining theoretical calculations with results of high-resolution transmission electron microscopy, atomic force microscopy and photoluminescence. Five period InAs/GaAs epilayers were grown by metalorganic vapor phase epitaxy at a very low growth rate, with different InAs deposition times, in order to investigate the morphological and optical evolution from extended 2D InAs flat areas of various thicknesses, starting at 1 monolayer, to the nucleation of 3D InAs islands. The coexistence of extended monolayer-flat 2D terraces of different thicknesses and 3D islands is demonstrated. Optically active InAs 2D terraces with a thickness beyond the critical value are detected. For longer deposition times, quantum dots are nucleated and their size increases at the expense of the 3 monolayer thick 2D layers.

Original languageEnglish (US)
Pages (from-to)47-54
Number of pages8
JournalJournal of Crystal Growth
Volume434
DOIs
StatePublished - Jan 15 2016

Keywords

  • A.1 Nanostructures
  • A.3 Metalorganic vapor phase epitaxy
  • B.1 Arsenates
  • B.2 Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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    Torelly, G., Jakomin, R., Pinto, L. D., Pires, M. P., Ruiz, J., Caldas, P. G., Prioli, R., Xie, H., Ponce, F., & Souza, P. L. (2016). Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE. Journal of Crystal Growth, 434, 47-54. https://doi.org/10.1016/j.jcrysgro.2015.10.031