Abstract
An investigation of ultra-thin InAs layers deposited on GaAs is carried out combining theoretical calculations with results of high-resolution transmission electron microscopy, atomic force microscopy and photoluminescence. Five period InAs/GaAs epilayers were grown by metalorganic vapor phase epitaxy at a very low growth rate, with different InAs deposition times, in order to investigate the morphological and optical evolution from extended 2D InAs flat areas of various thicknesses, starting at 1 monolayer, to the nucleation of 3D InAs islands. The coexistence of extended monolayer-flat 2D terraces of different thicknesses and 3D islands is demonstrated. Optically active InAs 2D terraces with a thickness beyond the critical value are detected. For longer deposition times, quantum dots are nucleated and their size increases at the expense of the 3 monolayer thick 2D layers.
Original language | English (US) |
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Pages (from-to) | 47-54 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 434 |
DOIs | |
State | Published - Jan 15 2016 |
Keywords
- A.1 Nanostructures
- A.3 Metalorganic vapor phase epitaxy
- B.1 Arsenates
- B.2 Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry