Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, Hai Lu, William J. Schaff, Hon Way Lin, Shangjr Gwo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time-resolved Raman spectroscopy on a subpicosecond time scale has been used to study the phonon dynamics of both the A1(LO) and the E 1(LO) phonons in InN. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of 5×1017cm-3 to 0.25 ps, at the highest density of 2×1019cm-3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

Original languageEnglish (US)
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials XII
DOIs
StatePublished - Apr 21 2008
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XII - San Jose, CA, United States
Duration: Jan 20 2008Jan 23 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6892
ISSN (Print)0277-786X

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials XII
CountryUnited States
CitySan Jose, CA
Period1/20/081/23/08

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Keywords

  • InN
  • Time-resolved Raman spectroscopy; LO phonon lifetimes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Tsen, K-T., Kiang, J. G., Ferry, D. K., Lu, H., Schaff, W. J., Lin, H. W., & Gwo, S. (2008). Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII [689206] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6892). https://doi.org/10.1117/12.762319