Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces

M. C. Zeman, Robert Nemanich, A. Sunda-Meya

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The growth and coarsening dynamics of dysprosium silicide nanostructures are observed in real-time using photoelectron emission microscopy. The annealing of a thin Dy film to temperatures in the range of 700-1050 C results in the formation of epitaxial rectangular silicide islands and nanowires on Si(001) and triangular and hexagonal silicide islands on Si(111). During continuous annealing, individual islands are observed to coarsen via Ostwald ripening at different rates as a consequence of local variations in the size and relative location of the surrounding islands on the surface. A subsequent deposition of Dy onto the Si(001) surface at 1050 C leads to the growth of the preexisting islands and to the formation of silicide nanowires at temperatures above where nanowire growth typically occurs. Immediately after the deposition is terminated, the nanowires begin to decay from the ends, apparently transferring atoms to the more stable rectangular islands. On Si(111), a low continuous flux of Dy at 1050 C leads to the growth of kinked and jagged island structures, which ultimately form into nearly equilateral triangular shapes.

Original languageEnglish (US)
Pages (from-to)1812-1823
Number of pages12
JournalJournal of Materials Science
Volume49
Issue number4
DOIs
StatePublished - Feb 2014

Fingerprint

Dysprosium
Nanowires
Nanostructures
Annealing
Ostwald ripening
Coarsening
Photoelectrons
Microscopic examination
Fluxes
Thin films
Atoms
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces. / Zeman, M. C.; Nemanich, Robert; Sunda-Meya, A.

In: Journal of Materials Science, Vol. 49, No. 4, 02.2014, p. 1812-1823.

Research output: Contribution to journalArticle

@article{6a5165a27c814f4b98c2c3bca52066ca,
title = "Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces",
abstract = "The growth and coarsening dynamics of dysprosium silicide nanostructures are observed in real-time using photoelectron emission microscopy. The annealing of a thin Dy film to temperatures in the range of 700-1050 C results in the formation of epitaxial rectangular silicide islands and nanowires on Si(001) and triangular and hexagonal silicide islands on Si(111). During continuous annealing, individual islands are observed to coarsen via Ostwald ripening at different rates as a consequence of local variations in the size and relative location of the surrounding islands on the surface. A subsequent deposition of Dy onto the Si(001) surface at 1050 C leads to the growth of the preexisting islands and to the formation of silicide nanowires at temperatures above where nanowire growth typically occurs. Immediately after the deposition is terminated, the nanowires begin to decay from the ends, apparently transferring atoms to the more stable rectangular islands. On Si(111), a low continuous flux of Dy at 1050 C leads to the growth of kinked and jagged island structures, which ultimately form into nearly equilateral triangular shapes.",
author = "Zeman, {M. C.} and Robert Nemanich and A. Sunda-Meya",
year = "2014",
month = "2",
doi = "10.1007/s10853-013-7869-5",
language = "English (US)",
volume = "49",
pages = "1812--1823",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "4",

}

TY - JOUR

T1 - Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces

AU - Zeman, M. C.

AU - Nemanich, Robert

AU - Sunda-Meya, A.

PY - 2014/2

Y1 - 2014/2

N2 - The growth and coarsening dynamics of dysprosium silicide nanostructures are observed in real-time using photoelectron emission microscopy. The annealing of a thin Dy film to temperatures in the range of 700-1050 C results in the formation of epitaxial rectangular silicide islands and nanowires on Si(001) and triangular and hexagonal silicide islands on Si(111). During continuous annealing, individual islands are observed to coarsen via Ostwald ripening at different rates as a consequence of local variations in the size and relative location of the surrounding islands on the surface. A subsequent deposition of Dy onto the Si(001) surface at 1050 C leads to the growth of the preexisting islands and to the formation of silicide nanowires at temperatures above where nanowire growth typically occurs. Immediately after the deposition is terminated, the nanowires begin to decay from the ends, apparently transferring atoms to the more stable rectangular islands. On Si(111), a low continuous flux of Dy at 1050 C leads to the growth of kinked and jagged island structures, which ultimately form into nearly equilateral triangular shapes.

AB - The growth and coarsening dynamics of dysprosium silicide nanostructures are observed in real-time using photoelectron emission microscopy. The annealing of a thin Dy film to temperatures in the range of 700-1050 C results in the formation of epitaxial rectangular silicide islands and nanowires on Si(001) and triangular and hexagonal silicide islands on Si(111). During continuous annealing, individual islands are observed to coarsen via Ostwald ripening at different rates as a consequence of local variations in the size and relative location of the surrounding islands on the surface. A subsequent deposition of Dy onto the Si(001) surface at 1050 C leads to the growth of the preexisting islands and to the formation of silicide nanowires at temperatures above where nanowire growth typically occurs. Immediately after the deposition is terminated, the nanowires begin to decay from the ends, apparently transferring atoms to the more stable rectangular islands. On Si(111), a low continuous flux of Dy at 1050 C leads to the growth of kinked and jagged island structures, which ultimately form into nearly equilateral triangular shapes.

UR - http://www.scopus.com/inward/record.url?scp=84891629825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891629825&partnerID=8YFLogxK

U2 - 10.1007/s10853-013-7869-5

DO - 10.1007/s10853-013-7869-5

M3 - Article

VL - 49

SP - 1812

EP - 1823

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 4

ER -