Drawing graphene nanoribbons on SiC by ion implantation

Sefaattin Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, B. R. Appleton

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Abstract

We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

Original languageEnglish (US)
Article number073501
JournalApplied Physics Letters
Volume100
Issue number7
DOIs
Publication statusPublished - Feb 13 2012
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tongay, S., Lemaitre, M., Fridmann, J., Hebard, A. F., Gila, B. P., & Appleton, B. R. (2012). Drawing graphene nanoribbons on SiC by ion implantation. Applied Physics Letters, 100(7), [073501]. https://doi.org/10.1063/1.3682479