Drawing graphene nanoribbons on SiC by ion implantation

Sefaattin Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, B. R. Appleton

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

Original languageEnglish (US)
Article number073501
JournalApplied Physics Letters
Volume100
Issue number7
DOIs
StatePublished - Feb 13 2012
Externally publishedYes

Fingerprint

ion implantation
graphene
graphitization
lithography
annealing
temperature
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tongay, S., Lemaitre, M., Fridmann, J., Hebard, A. F., Gila, B. P., & Appleton, B. R. (2012). Drawing graphene nanoribbons on SiC by ion implantation. Applied Physics Letters, 100(7), [073501]. https://doi.org/10.1063/1.3682479

Drawing graphene nanoribbons on SiC by ion implantation. / Tongay, Sefaattin; Lemaitre, M.; Fridmann, J.; Hebard, A. F.; Gila, B. P.; Appleton, B. R.

In: Applied Physics Letters, Vol. 100, No. 7, 073501, 13.02.2012.

Research output: Contribution to journalArticle

Tongay, S, Lemaitre, M, Fridmann, J, Hebard, AF, Gila, BP & Appleton, BR 2012, 'Drawing graphene nanoribbons on SiC by ion implantation', Applied Physics Letters, vol. 100, no. 7, 073501. https://doi.org/10.1063/1.3682479
Tongay S, Lemaitre M, Fridmann J, Hebard AF, Gila BP, Appleton BR. Drawing graphene nanoribbons on SiC by ion implantation. Applied Physics Letters. 2012 Feb 13;100(7). 073501. https://doi.org/10.1063/1.3682479
Tongay, Sefaattin ; Lemaitre, M. ; Fridmann, J. ; Hebard, A. F. ; Gila, B. P. ; Appleton, B. R. / Drawing graphene nanoribbons on SiC by ion implantation. In: Applied Physics Letters. 2012 ; Vol. 100, No. 7.
@article{f316caeb95d14f4d9de16923b6e4a392,
title = "Drawing graphene nanoribbons on SiC by ion implantation",
abstract = "We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.",
author = "Sefaattin Tongay and M. Lemaitre and J. Fridmann and Hebard, {A. F.} and Gila, {B. P.} and Appleton, {B. R.}",
year = "2012",
month = "2",
day = "13",
doi = "10.1063/1.3682479",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Drawing graphene nanoribbons on SiC by ion implantation

AU - Tongay, Sefaattin

AU - Lemaitre, M.

AU - Fridmann, J.

AU - Hebard, A. F.

AU - Gila, B. P.

AU - Appleton, B. R.

PY - 2012/2/13

Y1 - 2012/2/13

N2 - We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

AB - We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

UR - http://www.scopus.com/inward/record.url?scp=84857300767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857300767&partnerID=8YFLogxK

U2 - 10.1063/1.3682479

DO - 10.1063/1.3682479

M3 - Article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 073501

ER -