We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Feb 13 2012|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)