Drawing graphene nanoribbons on SiC by ion implantation

S. Tongay; M. Lemaitre; J. Fridmann; A. F. Hebard; B. P. Gila; B. R. Appleton

doi:10.1063/1.3682479

Drawing graphene nanoribbons on SiC by ion implantation

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, B. R. Appleton

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T _G) of SiC. We find that ion implantation of SiC lowers the T _G, allowing selective graphene growth at temperatures below the T _G of pristine SiC and above T _G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

Original language	English (US)
Article number	073501
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3682479
State	Published - Feb 13 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3682479

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title = "Drawing graphene nanoribbons on SiC by ion implantation",

abstract = "We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.",

author = "S. Tongay and M. Lemaitre and J. Fridmann and Hebard, {A. F.} and Gila, {B. P.} and Appleton, {B. R.}",

note = "Funding Information: This work is supported by the Office of Naval Research (ONR) under Contract No 00075094 (BA) and by the National Science Foundation (NSF) under Contract No. 1005301 (AFH). We would like to acknowledge the support of the Staff and Nanofabrication Engineers at Nanoscale Research Facility, University of Florida and Noone Savage for preparing cover image and the research highlight image. ",

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AU - Tongay, S.

AU - Lemaitre, M.

AU - Fridmann, J.

AU - Hebard, A. F.

AU - Gila, B. P.

AU - Appleton, B. R.

N1 - Funding Information: This work is supported by the Office of Naval Research (ONR) under Contract No 00075094 (BA) and by the National Science Foundation (NSF) under Contract No. 1005301 (AFH). We would like to acknowledge the support of the Staff and Nanofabrication Engineers at Nanoscale Research Facility, University of Florida and Noone Savage for preparing cover image and the research highlight image.

PY - 2012/2/13

Y1 - 2012/2/13

N2 - We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

AB - We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 C below the graphitization temperature (T G) of SiC. We find that ion implantation of SiC lowers the T G, allowing selective graphene growth at temperatures below the T G of pristine SiC and above T G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

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Drawing graphene nanoribbons on SiC by ion implantation

Abstract

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