Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Nov 5 2001|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)