Abstract
Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.
Original language | English (US) |
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Pages (from-to) | 3170-3172 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 19 |
DOIs | |
State | Published - Nov 5 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)