Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100)

Junqi Xie, J. Tolle, V. R. D'Costa, Andrew Chizmeshya, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

Doped and intrinsic Ge1-x-y Six Sny alloys are synthesized directly on Si(100) using simple deposition chemistries and their optical and electrical properties are determined. Tuning the Si/Sn ratio at ∼4 yields strain-free films with Ge-like cell dimensions, while variation of the ratio around this value produces compressively strained, tetragonal structures with an in-plane lattice constant "pinned" to a value close to that of pure Ge (5.658 Å). First-principles calculations show that mixing entropy thermodynamically stabilizes SiGeSn in contrast to GeSn analogs with the same Sn content. GeSn and SiGeSn are predicted to become metastable for 2% and 12% Sn, respectively, in good agreement with experiment.

Original languageEnglish (US)
Article number181909
JournalApplied Physics Letters
Volume95
Issue number18
DOIs
StatePublished - Nov 16 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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