Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100)

Junqi Xie, J. Tolle, V. R. D'Costa, Andrew Chizmeshya, Jose Menendez, John Kouvetakis

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33 Citations (Scopus)

Abstract

Doped and intrinsic Ge1-x-y Six Sny alloys are synthesized directly on Si(100) using simple deposition chemistries and their optical and electrical properties are determined. Tuning the Si/Sn ratio at ∼4 yields strain-free films with Ge-like cell dimensions, while variation of the ratio around this value produces compressively strained, tetragonal structures with an in-plane lattice constant "pinned" to a value close to that of pure Ge (5.658 Å). First-principles calculations show that mixing entropy thermodynamically stabilizes SiGeSn in contrast to GeSn analogs with the same Sn content. GeSn and SiGeSn are predicted to become metastable for 2% and 12% Sn, respectively, in good agreement with experiment.

Original languageEnglish (US)
Article number181909
JournalApplied Physics Letters
Volume95
Issue number18
DOIs
StatePublished - 2009

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electrical properties
tuning
chemistry
entropy
analogs
optical properties
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100). / Xie, Junqi; Tolle, J.; D'Costa, V. R.; Chizmeshya, Andrew; Menendez, Jose; Kouvetakis, John.

In: Applied Physics Letters, Vol. 95, No. 18, 181909, 2009.

Research output: Contribution to journalArticle

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