Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

C. L. Senaratne, P. M. Wallace, J. D. Gallagher, P. E. Sims, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1- ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1- ySny/p-Ge1- zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1- xSnx/i-Ge1- ySny/p-Ge1- zSnz architectures incorporating Ge1- xSnx intermediate layers (x ∼ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1- x - ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account the latest experimental and theoretical work on band offsets involving such materials.

Original languageEnglish (US)
Article number025701
JournalJournal of Applied Physics
Volume120
Issue number2
DOIs
StatePublished - Jul 14 2016

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photodiodes
diodes
fabrication
dark current
ternary alloys
binary alloys
cryogenic temperature
electroluminescence
electrical measurement
engineers
hydrides
crystallinity
light emitting diodes
reactivity
platforms
tuning
vapor deposition
thresholds
augmentation
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Direct gap Ge1-ySny alloys : Fabrication and design of mid-IR photodiodes. / Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, John; Menendez, Jose.

In: Journal of Applied Physics, Vol. 120, No. 2, 025701, 14.07.2016.

Research output: Contribution to journalArticle

Senaratne, C. L. ; Wallace, P. M. ; Gallagher, J. D. ; Sims, P. E. ; Kouvetakis, John ; Menendez, Jose. / Direct gap Ge1-ySny alloys : Fabrication and design of mid-IR photodiodes. In: Journal of Applied Physics. 2016 ; Vol. 120, No. 2.
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