Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates

R. A. Kiehl, P. G. Flahive, S. H. Wemple, H. M. Cox

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.

Original languageEnglish (US)
Pages (from-to)325-326
Number of pages2
JournalIEEE Electron Device Letters
Volume3
Issue number11
DOIs
StatePublished - Nov 1982

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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