Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates

Richard Kiehl, P. G. Flahive, S. H. Wemple, H. M. Cox

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.

Original languageEnglish (US)
Pages (from-to)325-326
Number of pages2
JournalIEEE Electron Device Letters
Volume3
Issue number11
DOIs
StatePublished - 1982
Externally publishedYes

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Lithography
Chemical vapor deposition
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates. / Kiehl, Richard; Flahive, P. G.; Wemple, S. H.; Cox, H. M.

In: IEEE Electron Device Letters, Vol. 3, No. 11, 1982, p. 325-326.

Research output: Contribution to journalArticle

Kiehl, Richard ; Flahive, P. G. ; Wemple, S. H. ; Cox, H. M. / Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates. In: IEEE Electron Device Letters. 1982 ; Vol. 3, No. 11. pp. 325-326.
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