Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates

R. A. Kiehl; P. G. Flahive; S. H. Wemple; H. M. Cox

doi:10.1109/EDL.1982.25588

Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates

R. A. Kiehl, P. G. Flahive, S. H. Wemple, H. M. Cox

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.

Original language	English (US)
Pages (from-to)	325-326
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	3
Issue number	11
DOIs	https://doi.org/10.1109/EDL.1982.25588
State	Published - Nov 1982
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1982.25588

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abstract = "The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.",

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year = "1982",

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N2 - The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.

AB - The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.

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Direct-Coupled GaAs Ring Oscillators with Self-Aligned Gates

Abstract

ASJC Scopus subject areas

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