Richard Kiehl, D. J. Frank, S. L. Wright, J. H. Magerlein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations


The results of experiments and computer simulation data are presented for a quantum-well heterostructure FET that is undoped (except for a thin layer beneath the well) and is fabricated in an ion-implanted self-aligned geometry. Key aspects of the physics of this device, which relate to channel access, charge control, and deep-level trapping, are described. The quantum-well metal insulator inverted-interface semiconductor FET (self-aligned QW-MI**3SFETs) possess lower gate leakage than other heterostructure FETs (HFETs), lower access resistance than recessed-gate QW-MI**3SFET designs, lower output conductance than single-interface HFETs, and considerably lower 77 K trapping effects than in conventional MODFETs. The characteristics of the QW-MI**3SFET are influenced by compositional disordering, interchannel gating, carrier confinement, and charge screening within the structure.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Number of pages4
StatePublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'DEVICE PHYSICS OF QUANTUM-WELL HETEROSTRUCTURE MI**3SFET's.'. Together they form a unique fingerprint.

Cite this