Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array

Jiyong Woo, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We explore design space considerations of an ovonic threshold switch (OTS) for successful read operations in cross-point magnetic random access memory (MRAM) arrays through array-level SPICE simulations. We reveal that an appropriate threshold voltage (Vth) of the OTS considering the voltage matching with the MRAM should be used to achieve a reasonable read voltage margin. In addition, a low off-current of the OTS is required to prevent sneak-path currents, which ensures a sufficient read-out current ratio in large arrays. Based on a survey of recent literature on the OTS, we discuss how the desirable parameters can be achieved from material engineering perspective.

Original languageEnglish (US)
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages148-150
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 1 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: Mar 12 2019Mar 15 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period3/12/193/15/19

Fingerprint

random access memory
switches
Switches
Data storage equipment
thresholds
Electric potential
electric potential
SPICE
Threshold voltage
threshold voltage
margins
engineering
simulation

Keywords

  • and cross-point array
  • MRAM
  • OTS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Woo, J., & Yu, S. (2019). Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 148-150). [8731137] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731137

Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. / Woo, Jiyong; Yu, Shimeng.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 148-150 8731137 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Woo, J & Yu, S 2019, Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731137, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 148-150, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 3/12/19. https://doi.org/10.1109/EDTM.2019.8731137
Woo J, Yu S. Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 148-150. 8731137. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731137
Woo, Jiyong ; Yu, Shimeng. / Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 148-150 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
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