Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array

Jiyong Woo; Shimeng Yu

doi:10.1109/EDTM.2019.8731137

Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array

Jiyong Woo, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We explore design space considerations of an ovonic threshold switch (OTS) for successful read operations in cross-point magnetic random access memory (MRAM) arrays through array-level SPICE simulations. We reveal that an appropriate threshold voltage (V_th) of the OTS considering the voltage matching with the MRAM should be used to achieve a reasonable read voltage margin. In addition, a low off-current of the OTS is required to prevent sneak-path currents, which ensures a sufficient read-out current ratio in large arrays. Based on a survey of recent literature on the OTS, we discuss how the desirable parameters can be achieved from material engineering perspective.

Original language	English (US)
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	148-150
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731137
State	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: Mar 12 2019 → Mar 15 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	3/12/19 → 3/15/19

Keywords

MRAM
OTS
and cross-point array

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Access to Document

10.1109/EDTM.2019.8731137

Cite this

Woo, J., & Yu, S. (2019). Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 148-150). Article 8731137 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731137

Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. / Woo, Jiyong; Yu, Shimeng.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 148-150 8731137 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Woo, J & Yu, S 2019, Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731137, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 148-150, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 3/12/19. https://doi.org/10.1109/EDTM.2019.8731137

Woo J, Yu S. Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 148-150. 8731137. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731137

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title = "Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array",

abstract = "We explore design space considerations of an ovonic threshold switch (OTS) for successful read operations in cross-point magnetic random access memory (MRAM) arrays through array-level SPICE simulations. We reveal that an appropriate threshold voltage (Vth) of the OTS considering the voltage matching with the MRAM should be used to achieve a reasonable read voltage margin. In addition, a low off-current of the OTS is required to prevent sneak-path currents, which ensures a sufficient read-out current ratio in large arrays. Based on a survey of recent literature on the OTS, we discuss how the desirable parameters can be achieved from material engineering perspective.",

keywords = "MRAM, OTS, and cross-point array",

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AB - We explore design space considerations of an ovonic threshold switch (OTS) for successful read operations in cross-point magnetic random access memory (MRAM) arrays through array-level SPICE simulations. We reveal that an appropriate threshold voltage (Vth) of the OTS considering the voltage matching with the MRAM should be used to achieve a reasonable read voltage margin. In addition, a low off-current of the OTS is required to prevent sneak-path currents, which ensures a sufficient read-out current ratio in large arrays. Based on a survey of recent literature on the OTS, we discuss how the desirable parameters can be achieved from material engineering perspective.

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KW - and cross-point array

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Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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