Development of a new methodology to model the synergistic effects between TID and ASETs

Nicolas J.H. Roche, L. Dusseau, J. Boch, Yago Gonzalez Velo, J. R. Vaillé, F. Saigné, G. Auriel, B. Azais, S. P. Buchner, R. Marec, P. Calvel, F. Bezerra

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

A high level model is developed using circuit analysis to predict the synergy effect observed on a three stages operational amplifier. This model makes possible to explain and to predict the analog single event transients propagation in circuitry. The effect of total ionizing dose is taken into account by varying the model parameters using the monitoring of the usual supply current induced degradation of the operational amplifier.

Original languageEnglish (US)
Article number5550420
Pages (from-to)1861-1868
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number4 PART 1
DOIs
StatePublished - Aug 1 2010
Externally publishedYes

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Keywords

  • Bipolar analog integrated circuits
  • integrated circuit modeling
  • ionizing dose
  • single event transient
  • transient propagation
  • transient response

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Roche, N. J. H., Dusseau, L., Boch, J., Gonzalez Velo, Y., Vaillé, J. R., Saigné, F., Auriel, G., Azais, B., Buchner, S. P., Marec, R., Calvel, P., & Bezerra, F. (2010). Development of a new methodology to model the synergistic effects between TID and ASETs. IEEE Transactions on Nuclear Science, 57(4 PART 1), 1861-1868. [5550420]. https://doi.org/10.1109/TNS.2010.2042616