Abstract

The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages193-195
Number of pages3
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

    Fingerprint

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S. R., Vadiee, E., Ponce, F., Arena, C., Honsberg, C., & Goodnick, S. (2016). Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 193-195). [7749576] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749576