Abstract

The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages193-195
Number of pages3
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Nitrides
Solar energy
Solar cells
Energy gap
Volatile organic compounds
Semiconductor materials
Temperature
Electric potential
Hot Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S. R., Vadiee, E., ... Goodnick, S. (2016). Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 193-195). [7749576] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749576

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M.; Ding, Ding; Young, Steven R.; Vadiee, Ehsan; Ponce, Fernando; Arena, Chantal; Honsberg, Christiana; Goodnick, Stephen.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 193-195 7749576.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Williams, JJ, McFavilen, H, Fischer, AM, Ding, D, Young, SR, Vadiee, E, Ponce, F, Arena, C, Honsberg, C & Goodnick, S 2016, Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749576, Institute of Electrical and Electronics Engineers Inc., pp. 193-195, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749576
Williams JJ, McFavilen H, Fischer AM, Ding D, Young SR, Vadiee E et al. Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 193-195. 7749576 https://doi.org/10.1109/PVSC.2016.7749576
Williams, Joshua J. ; McFavilen, Heather ; Fischer, Alec M. ; Ding, Ding ; Young, Steven R. ; Vadiee, Ehsan ; Ponce, Fernando ; Arena, Chantal ; Honsberg, Christiana ; Goodnick, Stephen. / Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 193-195
@inproceedings{c0e27a16a0484cbdadcc5e6c9c0a4c84,
title = "Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology",
abstract = "The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.",
author = "Williams, {Joshua J.} and Heather McFavilen and Fischer, {Alec M.} and Ding Ding and Young, {Steven R.} and Ehsan Vadiee and Fernando Ponce and Chantal Arena and Christiana Honsberg and Stephen Goodnick",
year = "2016",
month = "11",
day = "18",
doi = "10.1109/PVSC.2016.7749576",
language = "English (US)",
volume = "2016-November",
pages = "193--195",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

AU - Williams, Joshua J.

AU - McFavilen, Heather

AU - Fischer, Alec M.

AU - Ding, Ding

AU - Young, Steven R.

AU - Vadiee, Ehsan

AU - Ponce, Fernando

AU - Arena, Chantal

AU - Honsberg, Christiana

AU - Goodnick, Stephen

PY - 2016/11/18

Y1 - 2016/11/18

N2 - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

AB - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

UR - http://www.scopus.com/inward/record.url?scp=85003678422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003678422&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749576

DO - 10.1109/PVSC.2016.7749576

M3 - Conference contribution

VL - 2016-November

SP - 193

EP - 195

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -