Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Joshua J. Williams; Heather McFavilen; Alec M. Fischer; Ding Ding; Steven R. Young; Ehsan Vadiee; Fernando Ponce; Chantal Arena; Christiana Honsberg; Stephen Goodnick

doi:10.1109/PVSC.2016.7749576

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Joshua J. Williams, Heather McFavilen, Alec M. Fischer, Ding Ding, Steven R. Young, Ehsan Vadiee, Fernando Ponce, Chantal Arena, Christiana Honsberg, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	193-195
Number of pages	3
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749576
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749576

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Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S. R., Vadiee, E., Ponce, F., Arena, C., Honsberg, C., & Goodnick, S. (2016). Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 193-195). Article 7749576 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749576

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 193-195 7749576.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Williams, JJ, McFavilen, H, Fischer, AM, Ding, D, Young, SR, Vadiee, E, Ponce, F, Arena, C, Honsberg, C & Goodnick, S 2016, Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749576, Institute of Electrical and Electronics Engineers Inc., pp. 193-195, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749576

Williams JJ, McFavilen H, Fischer AM, Ding D, Young SR, Vadiee E et al. Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 193-195. 7749576 doi: 10.1109/PVSC.2016.7749576

@inproceedings{c0e27a16a0484cbdadcc5e6c9c0a4c84,

title = "Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology",

abstract = "The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.",

author = "Williams, {Joshua J.} and Heather McFavilen and Fischer, {Alec M.} and Ding Ding and Young, {Steven R.} and Ehsan Vadiee and Fernando Ponce and Chantal Arena and Christiana Honsberg and Stephen Goodnick",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749576",

language = "English (US)",

volume = "2016-November",

pages = "193--195",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

}

TY - GEN

T1 - Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

AU - Williams, Joshua J.

AU - McFavilen, Heather

AU - Fischer, Alec M.

AU - Ding, Ding

AU - Young, Steven R.

AU - Vadiee, Ehsan

AU - Ponce, Fernando

AU - Arena, Chantal

AU - Honsberg, Christiana

AU - Goodnick, Stephen

PY - 2016/11/18

Y1 - 2016/11/18

N2 - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

AB - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

UR - http://www.scopus.com/inward/record.url?scp=85003678422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003678422&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749576

DO - 10.1109/PVSC.2016.7749576

M3 - Conference contribution

AN - SCOPUS:85003678422

VL - 2016-November

SP - 193

EP - 195

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

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