@inproceedings{2157228596fc4bf3a34c616b964dc19d,
title = "Development for ultraviolet vertical cavity surface emitting lasers",
abstract = "We report our current development progress of ultraviolet vertical-cavity surface-emitting lasers, which included the development of an electrically conducting n-DBR consisting of 40-pairs of Si-doped quarter-wavelength layers of Al0.12Ga0.88N and GaN. A peak reflectivity of 91.6% at 368 nm was measured and a series resistance of 17.7Ω was extracted near the maximum measured current of 100 mA. Furthermore, a micro-cavity light emitting diode was demonstrated by utilizing the established n-DBR. A 2λ cavity was subsequently grown on the 40-pair Al0.12Ga0.88N/GaN n-DBR and a peak wavelength of 371.4 nm was observed with spectral linewidth of 5.8 nm.",
keywords = "III-V semiconductors, Metalorganic chemical vapor deposition, deep ultraviolet, lasers, optical pumping",
author = "Liu, {Yuh Shiuan} and Kao, {Tsung Ting} and Karan Mehta and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Hongen Xie and Fernando Ponce",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Gallium Nitride Materials and Devices XI ; Conference date: 15-02-2016 Through 18-02-2016",
year = "2016",
doi = "10.1117/12.2212617",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Yasushi Nanishi and Hiroshi Fujioka and Schwarz, {Ulrich T.} and Jen-Inn Chyi and Hadis Morko� and Jong-In Shim",
booktitle = "Gallium Nitride Materials and Devices XI",
}