Development for ultraviolet vertical cavity surface emitting lasers

Yuh Shiuan Liu, Tsung Ting Kao, Karan Mehta, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Hongen Xie, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report our current development progress of ultraviolet vertical-cavity surface-emitting lasers, which included the development of an electrically conducting n-DBR consisting of 40-pairs of Si-doped quarter-wavelength layers of Al0.12Ga0.88N and GaN. A peak reflectivity of 91.6% at 368 nm was measured and a series resistance of 17.7Ω was extracted near the maximum measured current of 100 mA. Furthermore, a micro-cavity light emitting diode was demonstrated by utilizing the established n-DBR. A 2λ cavity was subsequently grown on the 40-pair Al0.12Ga0.88N/GaN n-DBR and a peak wavelength of 371.4 nm was observed with spectral linewidth of 5.8 nm.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices XI
PublisherSPIE
Volume9748
ISBN (Electronic)9781628419832
DOIs
StatePublished - 2016
EventGallium Nitride Materials and Devices XI - San Francisco, United States
Duration: Feb 15 2016Feb 18 2016

Other

OtherGallium Nitride Materials and Devices XI
CountryUnited States
CitySan Francisco
Period2/15/162/18/16

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Keywords

  • deep ultraviolet
  • III-V semiconductors
  • lasers
  • Metalorganic chemical vapor deposition
  • optical pumping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

Liu, Y. S., Kao, T. T., Mehta, K., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Xie, H., & Ponce, F. (2016). Development for ultraviolet vertical cavity surface emitting lasers. In Gallium Nitride Materials and Devices XI (Vol. 9748). [974815] SPIE. https://doi.org/10.1117/12.2212617