Abstract
I-V method has been used to measure the barrier height of Schottky diodes for Cu, Ag, Au on GaAs (110) cleaved surfaces prepared in ultra high vacuum, and the soft X-ray photoelectron spectroscopy with synchrotron radiation has been carried out to determine the interfacial Fermi level position at the Cu-n-GaAs (110) interface. The results obtained by both methods are well consistent. The interfacial Fermi level position for noble metals on n-type GaAs (110) is located at 0. 9 plus or minus 0. 05 ev below the conduction band minimum, corresponding to the same value of the Schottky barrier height and to the donor level defined by the defect model.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 307-310 |
| Number of pages | 4 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 6 |
| Issue number | 3 |
| State | Published - May 1 1985 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry