DETERMINATION OF THE INTERFACIAL FERMI LEVEL POSITION FOR NOBLE METALS ON GaAs(110).

Shihong Pan, T. Kendelewicz, W. G. Petro, Nathan Newman

Research output: Contribution to journalArticle

Abstract

I-V method has been used to measure the barrier height of Schottky diodes for Cu, Ag, Au on GaAs (110) cleaved surfaces prepared in ultra high vacuum, and the soft X-ray photoelectron spectroscopy with synchrotron radiation has been carried out to determine the interfacial Fermi level position at the Cu-n-GaAs (110) interface. The results obtained by both methods are well consistent. The interfacial Fermi level position for noble metals on n-type GaAs (110) is located at 0. 9 plus or minus 0. 05 ev below the conduction band minimum, corresponding to the same value of the Schottky barrier height and to the donor level defined by the defect model.

Original languageEnglish (US)
Pages (from-to)307-310
Number of pages4
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume6
Issue number3
StatePublished - May 1985
Externally publishedYes

Fingerprint

Precious metals
Fermi level
noble metals
Ultrahigh vacuum
Synchrotron radiation
Conduction bands
Diodes
X ray photoelectron spectroscopy
Schottky diodes
Defects
ultrahigh vacuum
conduction bands
synchrotron radiation
photoelectron spectroscopy
defects
gallium arsenide
x rays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

DETERMINATION OF THE INTERFACIAL FERMI LEVEL POSITION FOR NOBLE METALS ON GaAs(110). / Pan, Shihong; Kendelewicz, T.; Petro, W. G.; Newman, Nathan.

In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 6, No. 3, 05.1985, p. 307-310.

Research output: Contribution to journalArticle

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