Determination of the inelastic mean-free-path and mean inner potential for AlAs and GaAs using off-axis electron holography and convergent beam electron diffraction

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Abstract

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

Original languageEnglish (US)
Pages (from-to)329-335
Number of pages7
JournalMicroscopy and Microanalysis
Volume13
Issue number5
DOIs
StatePublished - Oct 11 2007

Keywords

  • AlAs
  • Electron holography
  • GaAs
  • Inelastic mean-free-path
  • Mean inner potential

ASJC Scopus subject areas

  • Instrumentation

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