Abstract
The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.
Original language | English (US) |
---|---|
Pages (from-to) | 329-335 |
Number of pages | 7 |
Journal | Microscopy and Microanalysis |
Volume | 13 |
Issue number | 5 |
DOIs | |
State | Published - 2007 |
Keywords
- AlAs
- Electron holography
- GaAs
- Inelastic mean-free-path
- Mean inner potential
ASJC Scopus subject areas
- Instrumentation