Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures

Ding Ding, Shane Johnson, Jiang Bo Wang, Shui Qing Yu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using excitation dependent photoluminescence (PL) measurements. The PL measurements were performed at temperatures from 50 to 300 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The peak spontaneous emission quantum efficiency of molecular beam epitaxy (MBE) grown InGaAs/GaAs triple quantum wells is determined to be 0.941 at 300K with an overall best value of 0.992 at 100 K.

Original languageEnglish (US)
Title of host publicationSolid State Lighting and Solar Energy Technologies
DOIs
StatePublished - Jul 30 2008
EventSolid State Lighting and Solar Energy Technologies - Beijing, China
Duration: Nov 12 2007Nov 14 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6841
ISSN (Print)0277-786X

Other

OtherSolid State Lighting and Solar Energy Technologies
Country/TerritoryChina
CityBeijing
Period11/12/0711/14/07

Keywords

  • Molecular beam epitaxy
  • Photoluminescence
  • Quantum efficiency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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