Determination of complex permittivity for low- and high-loss materials at microwave frequencies

Siddharth K. Varadan, Lisha Zhang, George Pan, Terry Alford

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.

Original languageEnglish (US)
Title of host publication2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-222
Number of pages4
ISBN (Print)9781479936410
DOIs
StatePublished - May 7 2015
Event23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 - Portland, United States
Duration: Oct 26 2014 → Oct 29 2014

Other

Other23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014
CountryUnited States
CityPortland
Period10/26/14 → 10/29/14

Fingerprint

Microwave frequencies
Polychlorinated biphenyls
Permittivity
Copper
Bessel functions
Arsenic
Silicon wafers
Numerical analysis
Silicon

Keywords

  • Bessel's functions
  • complex permittivity
  • dielectric constant
  • measurement
  • microwave frequency
  • printed circuit board (PCB)
  • silicon wafer

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Varadan, S. K., Zhang, L., Pan, G., & Alford, T. (2015). Determination of complex permittivity for low- and high-loss materials at microwave frequencies. In 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 (pp. 219-222). [7103638] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPEPS.2014.7103638

Determination of complex permittivity for low- and high-loss materials at microwave frequencies. / Varadan, Siddharth K.; Zhang, Lisha; Pan, George; Alford, Terry.

2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 219-222 7103638.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Varadan, SK, Zhang, L, Pan, G & Alford, T 2015, Determination of complex permittivity for low- and high-loss materials at microwave frequencies. in 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014., 7103638, Institute of Electrical and Electronics Engineers Inc., pp. 219-222, 23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014, Portland, United States, 10/26/14. https://doi.org/10.1109/EPEPS.2014.7103638
Varadan SK, Zhang L, Pan G, Alford T. Determination of complex permittivity for low- and high-loss materials at microwave frequencies. In 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 219-222. 7103638 https://doi.org/10.1109/EPEPS.2014.7103638
Varadan, Siddharth K. ; Zhang, Lisha ; Pan, George ; Alford, Terry. / Determination of complex permittivity for low- and high-loss materials at microwave frequencies. 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 219-222
@inproceedings{fa41085b1071438c9a756c17234cbff5,
title = "Determination of complex permittivity for low- and high-loss materials at microwave frequencies",
abstract = "We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.",
keywords = "Bessel's functions, complex permittivity, dielectric constant, measurement, microwave frequency, printed circuit board (PCB), silicon wafer",
author = "Varadan, {Siddharth K.} and Lisha Zhang and George Pan and Terry Alford",
year = "2015",
month = "5",
day = "7",
doi = "10.1109/EPEPS.2014.7103638",
language = "English (US)",
isbn = "9781479936410",
pages = "219--222",
booktitle = "2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Determination of complex permittivity for low- and high-loss materials at microwave frequencies

AU - Varadan, Siddharth K.

AU - Zhang, Lisha

AU - Pan, George

AU - Alford, Terry

PY - 2015/5/7

Y1 - 2015/5/7

N2 - We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.

AB - We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.

KW - Bessel's functions

KW - complex permittivity

KW - dielectric constant

KW - measurement

KW - microwave frequency

KW - printed circuit board (PCB)

KW - silicon wafer

UR - http://www.scopus.com/inward/record.url?scp=84937144972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937144972&partnerID=8YFLogxK

U2 - 10.1109/EPEPS.2014.7103638

DO - 10.1109/EPEPS.2014.7103638

M3 - Conference contribution

SN - 9781479936410

SP - 219

EP - 222

BT - 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Access to Document