Abstract
We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.
Original language | English (US) |
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Title of host publication | 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 219-222 |
Number of pages | 4 |
ISBN (Print) | 9781479936410 |
DOIs | |
State | Published - May 7 2015 |
Event | 23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 - Portland, United States Duration: Oct 26 2014 → Oct 29 2014 |
Other
Other | 23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 |
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Country/Territory | United States |
City | Portland |
Period | 10/26/14 → 10/29/14 |
Keywords
- Bessel's functions
- complex permittivity
- dielectric constant
- measurement
- microwave frequency
- printed circuit board (PCB)
- silicon wafer
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering