Determination of complex permittivity for low- and high-loss materials at microwave frequencies

Siddharth K. Varadan; Lisha Zhang; George Pan; Terry Alford

doi:10.1109/EPEPS.2014.7103638

Determination of complex permittivity for low- and high-loss materials at microwave frequencies

Siddharth K. Varadan, Lisha Zhang, George Pan, Terry Alford

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.

Original language	English (US)
Title of host publication	2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	219-222
Number of pages	4
ISBN (Print)	9781479936410
DOIs	https://doi.org/10.1109/EPEPS.2014.7103638
State	Published - May 7 2015
Event	23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 - Portland, United States Duration: Oct 26 2014 → Oct 29 2014

Other

Other	23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014
Country/Territory	United States
City	Portland
Period	10/26/14 → 10/29/14

Keywords

Bessel's functions
complex permittivity
dielectric constant
measurement
microwave frequency
printed circuit board (PCB)
silicon wafer

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EPEPS.2014.7103638

Cite this

Varadan, S. K., Zhang, L., Pan, G., & Alford, T. (2015). Determination of complex permittivity for low- and high-loss materials at microwave frequencies. In 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 (pp. 219-222). [7103638] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPEPS.2014.7103638

Determination of complex permittivity for low- and high-loss materials at microwave frequencies. / Varadan, Siddharth K.; Zhang, Lisha; Pan, George et al.

2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 219-222 7103638.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Varadan, SK, Zhang, L, Pan, G & Alford, T 2015, Determination of complex permittivity for low- and high-loss materials at microwave frequencies. in 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014., 7103638, Institute of Electrical and Electronics Engineers Inc., pp. 219-222, 23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014, Portland, United States, 10/26/14. https://doi.org/10.1109/EPEPS.2014.7103638

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abstract = "We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.",

keywords = "Bessel's functions, complex permittivity, dielectric constant, measurement, microwave frequency, printed circuit board (PCB), silicon wafer",

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AB - We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.

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Determination of complex permittivity for low- and high-loss materials at microwave frequencies

Abstract

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Keywords

ASJC Scopus subject areas

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