Abstract

We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.

Original languageEnglish (US)
Title of host publication2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-222
Number of pages4
ISBN (Print)9781479936410
DOIs
StatePublished - May 7 2015
Event23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 - Portland, United States
Duration: Oct 26 2014Oct 29 2014

Other

Other23rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014
CountryUnited States
CityPortland
Period10/26/1410/29/14

Keywords

  • Bessel's functions
  • complex permittivity
  • dielectric constant
  • measurement
  • microwave frequency
  • printed circuit board (PCB)
  • silicon wafer

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Varadan, S. K., Zhang, L., Pan, G., & Alford, T. (2015). Determination of complex permittivity for low- and high-loss materials at microwave frequencies. In 2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2014 (pp. 219-222). [7103638] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPEPS.2014.7103638