Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance

Kunal Ghosh, Clarence J. Tracy, Bill Dauksher, Stanislau Herasimenka, Christiana Honsberg, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The charged state density at the a-Si/c-Si interface is an important parameter in a heterojunction a-Si/c-Si solar cell. The extraction of the charged state density at the interface from measurements of lateral conductance is demonstrated by simulations. In a-Si/c-Si heterojunction an inversion layer is formed at the interface between a-Si and c-Si (heterointerface). The lateral conductance of the inversion layer is much higher than the doped or intrinsic a-Si layer conductance and the current primarily flows through this path. The increase of the charged state density at the heterointerface weakens the inversion and hence lowers the lateral conductance of these devices. This effect is studied in this work by applying a theoretical model developed in the commercial simulator Sentaurus. The simulation results based on this model have shown that in an optimized device structure the sensitivity of the measurement technique in determining the charged state density can be on the order of 1 × 1010/cm2.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2680-2683
Number of pages4
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Inversion layers
Amorphous silicon
Heterojunctions
Crystalline materials
Silicon
Solar cells
Simulators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Ghosh, K., Tracy, C. J., Dauksher, B., Herasimenka, S., Honsberg, C., & Bowden, S. (2010). Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2680-2683). [5617086] https://doi.org/10.1109/PVSC.2010.5617086

Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. / Ghosh, Kunal; Tracy, Clarence J.; Dauksher, Bill; Herasimenka, Stanislau; Honsberg, Christiana; Bowden, Stuart.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 2680-2683 5617086.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ghosh, K, Tracy, CJ, Dauksher, B, Herasimenka, S, Honsberg, C & Bowden, S 2010, Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5617086, pp. 2680-2683, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5617086
Ghosh, Kunal ; Tracy, Clarence J. ; Dauksher, Bill ; Herasimenka, Stanislau ; Honsberg, Christiana ; Bowden, Stuart. / Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 2680-2683
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