Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance

Kunal Ghosh; Clarence J. Tracy; Bill Dauksher; Stanislau Herasimenka; Christiana Honsberg; Stuart Bowden

doi:10.1109/PVSC.2010.5617086

Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance

Kunal Ghosh, Clarence J. Tracy, Bill Dauksher, Stanislau Herasimenka, Christiana Honsberg, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The charged state density at the a-Si/c-Si interface is an important parameter in a heterojunction a-Si/c-Si solar cell. The extraction of the charged state density at the interface from measurements of lateral conductance is demonstrated by simulations. In a-Si/c-Si heterojunction an inversion layer is formed at the interface between a-Si and c-Si (heterointerface). The lateral conductance of the inversion layer is much higher than the doped or intrinsic a-Si layer conductance and the current primarily flows through this path. The increase of the charged state density at the heterointerface weakens the inversion and hence lowers the lateral conductance of these devices. This effect is studied in this work by applying a theoretical model developed in the commercial simulator Sentaurus. The simulation results based on this model have shown that in an optimized device structure the sensitivity of the measurement technique in determining the charged state density can be on the order of 1 × 10¹⁰/cm².

Original language	English (US)
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	2680-2683
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5617086
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2010.5617086

Cite this

Ghosh, K., Tracy, C. J., Dauksher, B., Herasimenka, S., Honsberg, C., & Bowden, S. (2010). Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 2680-2683). Article 5617086 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5617086

Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. / Ghosh, Kunal; Tracy, Clarence J.; Dauksher, Bill et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 2680-2683 5617086 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ghosh, K, Tracy, CJ, Dauksher, B, Herasimenka, S, Honsberg, C & Bowden, S 2010, Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5617086, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2680-2683, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5617086

Ghosh K, Tracy CJ, Dauksher B, Herasimenka S, Honsberg C, Bowden S. Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 2680-2683. 5617086. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2010.5617086

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AB - The charged state density at the a-Si/c-Si interface is an important parameter in a heterojunction a-Si/c-Si solar cell. The extraction of the charged state density at the interface from measurements of lateral conductance is demonstrated by simulations. In a-Si/c-Si heterojunction an inversion layer is formed at the interface between a-Si and c-Si (heterointerface). The lateral conductance of the inversion layer is much higher than the doped or intrinsic a-Si layer conductance and the current primarily flows through this path. The increase of the charged state density at the heterointerface weakens the inversion and hence lowers the lateral conductance of these devices. This effect is studied in this work by applying a theoretical model developed in the commercial simulator Sentaurus. The simulation results based on this model have shown that in an optimized device structure the sensitivity of the measurement technique in determining the charged state density can be on the order of 1 × 1010/cm2.

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Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance

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