Detection of the third transition of InAs/GaAsSb quantum dots

Keun Yong Ban, Stephen P. Bremner, Darius Kuciauskas, Som N. Dahal, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated InAs quantum dots (QDs) on GaAsSb barrier layers. Low temperature photoluminescence (PL) for InAs/GaAsSb with various δ-doping levels is performed to observe interband transitions. PL spectra of heavily doped QD samples show that the electrons injected from the δ-doping plane increase the intensity of the emission peak between the electron and hole first excited states, E1H1, not observed from undoped and lightly QD samples. Time resolved photoluminescence (TRPL) data as a function of δ-doping density reveal that the introduction of a δ-doping plane in the GaAsSb barrier decreases a carrier lifetime making recombination between ground states in QD area faster. As an evidence of carriers more injected from a δ-doping plane an Arrhenius fitting curve taken from temperature dependent PL indicates that the doped samples have the greater thermal activation energies than those of the lightly doped samples. Additionally, intersubband transitions of 20 multiple InAs QDs embedded in GaAsSb barriers are experimentally determined by low temperature (77K) Fourier Transformation-Infrared Spectroscopy (FT-IR) using a multiple internal reflection technique. It is noted that there is a broad peak around about 240meV corresponding to the energy separation between the electron ground state and the continuum state in the conduction band offset (CBO). The band structure based upon an eight band k.p method confirms the experimental results observed here. Furthermore, all related physical phenomena will be discussed as well.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages3503-3506
Number of pages4
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period6/19/116/24/11

Fingerprint

Semiconductor quantum dots
Doping (additives)
Photoluminescence
Ground state
Electrons
Carrier lifetime
Curve fitting
Conduction bands
Excited states
Band structure
Temperature
Infrared spectroscopy
Activation energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Ban, K. Y., Bremner, S. P., Kuciauskas, D., Dahal, S. N., & Honsberg, C. (2011). Detection of the third transition of InAs/GaAsSb quantum dots. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3503-3506). [6186704] https://doi.org/10.1109/PVSC.2011.6186704

Detection of the third transition of InAs/GaAsSb quantum dots. / Ban, Keun Yong; Bremner, Stephen P.; Kuciauskas, Darius; Dahal, Som N.; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 3503-3506 6186704.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ban, KY, Bremner, SP, Kuciauskas, D, Dahal, SN & Honsberg, C 2011, Detection of the third transition of InAs/GaAsSb quantum dots. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6186704, pp. 3503-3506, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6186704
Ban KY, Bremner SP, Kuciauskas D, Dahal SN, Honsberg C. Detection of the third transition of InAs/GaAsSb quantum dots. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 3503-3506. 6186704 https://doi.org/10.1109/PVSC.2011.6186704
Ban, Keun Yong ; Bremner, Stephen P. ; Kuciauskas, Darius ; Dahal, Som N. ; Honsberg, Christiana. / Detection of the third transition of InAs/GaAsSb quantum dots. Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. pp. 3503-3506
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