Design and Fabrication of SiC based Stepper Motor Driver for Higherature Environments

Ashwin Chandwani, Ayan Mallik, Akin Akturk, Weijian Xian, Usama Khalid, Neil Goldsman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the manufacturing procedure, testing and application of a high temperature (HT) and radiation tolerant silicon carbide (SiC) semiconductor device technology used to fabricate a stepper motor driver circuit for HT spacecraft applications. The proposed circuit employs 4H-SiC MOSFET technology and diodes designed to operate at high ambient temperatures (>400°C). The discrete FET portion of test dies is comprised of various widths and lengths of n-and p-channel discrete FETs for device optimization and compact model development, which is achieved by engineering doping profiles in conjunction with innovative device designs. The fabricated circuit consists of a logic synthesizer sub-system consisting of various HT logic gate modules and ring oscillators along with a specialized HT gate driver circuit. The proposed system is used to drive a 12V stepper motor at varying speeds in both clockwise and counterclockwise directions. Control schemes for a digital logic gate based unidirectional control and closed loop bidirectional control are also implemented with a customizable directional and stall control capabilities. The proposed topology uses all low side power devices and high side diodes to gain the advantage of single shared gate driver circuit for cost effectiveness and reliability enhancement. Results at 600°C environment report a conversion efficiency of 98%, with a Mean Time to Failure (MTTF) of 450 k-hours, which validates the proposed technology to be suitable for HT power conversion.

Original languageEnglish (US)
Title of host publication2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages176-181
Number of pages6
ISBN (Electronic)9781665401814
DOIs
StatePublished - 2021
Event8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Virtual, Online, United States
Duration: Nov 7 2021Nov 11 2021

Publication series

Name2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings

Conference

Conference8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021
Country/TerritoryUnited States
CityVirtual, Online
Period11/7/2111/11/21

Keywords

  • Buck-boost converter
  • DCIDC
  • High Temperature
  • on-state resistance
  • power MOSFET
  • SiC

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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