Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation

A. Bandyopadhyay; S. Subramanian; S. Chandrasekhar; A. Dentai; Stephen Goodnick

doi:10.1016/S0026-2714(99)00004-9

Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation

A. Bandyopadhyay, S. Subramanian, S. Chandrasekhar, A. Dentai, Stephen Goodnick

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The d.c. characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×10¹⁵ electrons/cm². No degradation was observed for electron doses below 10¹⁵/cm². For electron doses greater than 10¹⁵/cm² the following degradation effects were observed: (1) decrease in collector current; (2) decrease in current gain up to 50%; (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current; and (4) increase in output conductance. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The increase in the avalanche multiplication in the reverse biased base-collector junction caused by radiation induced defects is believed to be responsible for increased output conductance after irradiation.

Original language	English (US)
Pages (from-to)	333-339
Number of pages	7
Journal	Microelectronics Reliability
Volume	39
Issue number	3
DOIs	https://doi.org/10.1016/S0026-2714(99)00004-9
State	Published - Mar 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/S0026-2714(99)00004-9

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@article{b8226aa4fb6e45b59139d9cf057d4c51,

title = "Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation",

abstract = "The d.c. characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×1015 electrons/cm2. No degradation was observed for electron doses below 1015/cm2. For electron doses greater than 1015/cm2 the following degradation effects were observed: (1) decrease in collector current; (2) decrease in current gain up to 50%; (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current; and (4) increase in output conductance. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The increase in the avalanche multiplication in the reverse biased base-collector junction caused by radiation induced defects is believed to be responsible for increased output conductance after irradiation.",

author = "A. Bandyopadhyay and S. Subramanian and S. Chandrasekhar and A. Dentai and Stephen Goodnick",

note = "Funding Information: This work was supported by the United States Air Force Office of Scientific Research grant F49620-9610173. The authors also acknowledge the support from the Oregon State University Radiation Center in providing beta radiation facilities.",

year = "1999",

month = mar,

doi = "10.1016/S0026-2714(99)00004-9",

language = "English (US)",

volume = "39",

pages = "333--339",

journal = "Microelectronics Reliability",

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T1 - Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation

AU - Bandyopadhyay, A.

AU - Subramanian, S.

AU - Chandrasekhar, S.

AU - Dentai, A.

AU - Goodnick, Stephen

N1 - Funding Information: This work was supported by the United States Air Force Office of Scientific Research grant F49620-9610173. The authors also acknowledge the support from the Oregon State University Radiation Center in providing beta radiation facilities.

PY - 1999/3

Y1 - 1999/3

N2 - The d.c. characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×1015 electrons/cm2. No degradation was observed for electron doses below 1015/cm2. For electron doses greater than 1015/cm2 the following degradation effects were observed: (1) decrease in collector current; (2) decrease in current gain up to 50%; (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current; and (4) increase in output conductance. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The increase in the avalanche multiplication in the reverse biased base-collector junction caused by radiation induced defects is believed to be responsible for increased output conductance after irradiation.

AB - The d.c. characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×1015 electrons/cm2. No degradation was observed for electron doses below 1015/cm2. For electron doses greater than 1015/cm2 the following degradation effects were observed: (1) decrease in collector current; (2) decrease in current gain up to 50%; (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current; and (4) increase in output conductance. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The increase in the avalanche multiplication in the reverse biased base-collector junction caused by radiation induced defects is believed to be responsible for increased output conductance after irradiation.

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DO - 10.1016/S0026-2714(99)00004-9

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JO - Microelectronics Reliability

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ER -

Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation

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