Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation

A. Bandyopadhyay, S. Subramanian, S. Chandrasekhar, A. Dentai, Stephen Goodnick

Research output: Contribution to journalArticle

1 Scopus citations


The d.c. characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×1015 electrons/cm2. No degradation was observed for electron doses below 1015/cm2. For electron doses greater than 1015/cm2 the following degradation effects were observed: (1) decrease in collector current; (2) decrease in current gain up to 50%; (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current; and (4) increase in output conductance. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The increase in the avalanche multiplication in the reverse biased base-collector junction caused by radiation induced defects is believed to be responsible for increased output conductance after irradiation.

Original languageEnglish (US)
Pages (from-to)333-339
Number of pages7
JournalMicroelectronics Reliability
Issue number3
StatePublished - Mar 1999


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this