Abstract
The DC characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×10 15 electrons/cm 2. The following degradation effects were observed for electron doses greater than 10 15/cm 2: (1) decrease in collector current (2) decrease in current gain up to 50 percent, and (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction.
| Original language | English (US) |
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| Title of host publication | Annual Proceedings - Reliability Physics (Symposium) |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 98-102 |
| Number of pages | 5 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA Duration: Mar 31 1998 → Apr 2 1998 |
Other
| Other | Proceedings of the 1998 36th IEEE International Reliability Physics Symposium |
|---|---|
| City | Reno, NV, USA |
| Period | 3/31/98 → 4/2/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality