Degradation of InGaAs/InP heterojunction bipolar transistors under high energy electron irradiation

A. Bandyopadhyay, S. Subramanian, S. Chandrasekhar, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The DC characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (approximately 1 MeV) electron radiation of cumulative dose up to 5.4×10 15 electrons/cm 2. The following degradation effects were observed for electron doses greater than 10 15/cm 2: (1) decrease in collector current (2) decrease in current gain up to 50 percent, and (3) an increase in collector saturation voltage by 0.2-0.8 V depending on base current. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base-emitter junction.

Original languageEnglish (US)
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
Editors Anon
PublisherIEEE
Pages98-102
Number of pages5
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA
Duration: Mar 31 1998Apr 2 1998

Other

OtherProceedings of the 1998 36th IEEE International Reliability Physics Symposium
CityReno, NV, USA
Period3/31/984/2/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Bandyopadhyay, A., Subramanian, S., Chandrasekhar, S., & Goodnick, S. (1998). Degradation of InGaAs/InP heterojunction bipolar transistors under high energy electron irradiation. In Anon (Ed.), Annual Proceedings - Reliability Physics (Symposium) (pp. 98-102). IEEE.