Defect generation and suppression during the impurity induced layer disordering of quantum sized GaAs/GaInP layers

R. L. Thornton, D. P. Bour, D. Treat, Fernando Ponce, J. C. Tramontana, F. J. Endicott

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have performed extensive analysis of the process of IILD within he AlGaInP system, and in particular have considered the problem of intermixing across AlGaInP/AlGaAs interfaces. These interfaces are of particular interest because of the need to intermix uniformly on both the column III and the column V sites in order to minimize strain related effects. It has been observed that in the absence of such uniform intermixing, very large strains are generated with the crystal, resulting in extensive defect formation. The purpose of this study is to analyze the energetics of this defect formation with the desired goal of defining structure that are stable against defect formation in the presence of simultaneous anion/cation disordering.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thornton, R. L., Bour, D. P., Treat, D., Ponce, F., Tramontana, J. C., & Endicott, F. J. (1993). Defect generation and suppression during the impurity induced layer disordering of quantum sized GaAs/GaInP layers. In H. A. Atwater, E. Chason, M. H. Grabow, & M. G. Lagally (Eds.), Materials Research Society Symposium Proceedings (Vol. 280, pp. 445-448). Pittsburgh, PA, United States: Publ by Materials Research Society.