Defect generation and suppression during the impurity induced layer disordering of quantum sized GaAs/GaInP layers

R. L. Thornton, D. P. Bour, D. Treat, F. A. Ponce, J. C. Tramontana, F. J. Endicott

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have performed extensive analysis of the process of IILD within he AlGaInP system, and in particular have considered the problem of intermixing across AlGaInP/AlGaAs interfaces. These interfaces are of particular interest because of the need to intermix uniformly on both the column III and the column V sites in order to minimize strain related effects. It has been observed that in the absence of such uniform intermixing, very large strains are generated with the crystal, resulting in extensive defect formation. The purpose of this study is to analyze the energetics of this defect formation with the desired goal of defining structure that are stable against defect formation in the presence of simultaneous anion/cation disordering.

Original languageEnglish (US)
Title of host publicationEvolution of Surface and Thin Film Microstructure
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
PublisherPubl by Materials Research Society
Pages445-448
Number of pages4
ISBN (Print)1558991751
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume280
ISSN (Print)0272-9172

Other

OtherProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/30/9212/4/92

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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