CW Argon-ion laser crystallization of a-Si: H thin films

A. Sunda-Meya, D. Gracin, J. Dutta, B. Vlahovic, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm 2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM Stutzmann, J Boyce, J D Cohen, R Collins, J Hanna
StatePublished - 2001
Externally publishedYes
EventAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001


OtherAmorphous and Heterogeneous Silicon Based Films 2001
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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