CW Argon-ion laser crystallization of a-Si

H thin films

A. Sunda-Meya, D. Gracin, J. Dutta, B. Vlahovic, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm 2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM Stutzmann, J Boyce, J D Cohen, R Collins, J Hanna
Volume664
StatePublished - 2001
Externally publishedYes
EventAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

Other

OtherAmorphous and Heterogeneous Silicon Based Films 2001
CountryUnited States
CitySan Francisco, CA
Period4/16/014/20/01

Fingerprint

Argon
Crystallization
Ions
Thin films
Lasers
Hydrogen
Laser radiation
Crystal growth
Raman spectroscopy
Irradiation
Wire
Crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sunda-Meya, A., Gracin, D., Dutta, J., Vlahovic, B., & Nemanich, R. (2001). CW Argon-ion laser crystallization of a-Si: H thin films. In M. Stutzmann, J. Boyce, J. D. Cohen, R. Collins, & J. Hanna (Eds.), Materials Research Society Symposium - Proceedings (Vol. 664)

CW Argon-ion laser crystallization of a-Si : H thin films. / Sunda-Meya, A.; Gracin, D.; Dutta, J.; Vlahovic, B.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. ed. / M Stutzmann; J Boyce; J D Cohen; R Collins; J Hanna. Vol. 664 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sunda-Meya, A, Gracin, D, Dutta, J, Vlahovic, B & Nemanich, R 2001, CW Argon-ion laser crystallization of a-Si: H thin films. in M Stutzmann, J Boyce, JD Cohen, R Collins & J Hanna (eds), Materials Research Society Symposium - Proceedings. vol. 664, Amorphous and Heterogeneous Silicon Based Films 2001, San Francisco, CA, United States, 4/16/01.
Sunda-Meya A, Gracin D, Dutta J, Vlahovic B, Nemanich R. CW Argon-ion laser crystallization of a-Si: H thin films. In Stutzmann M, Boyce J, Cohen JD, Collins R, Hanna J, editors, Materials Research Society Symposium - Proceedings. Vol. 664. 2001
Sunda-Meya, A. ; Gracin, D. ; Dutta, J. ; Vlahovic, B. ; Nemanich, Robert. / CW Argon-ion laser crystallization of a-Si : H thin films. Materials Research Society Symposium - Proceedings. editor / M Stutzmann ; J Boyce ; J D Cohen ; R Collins ; J Hanna. Vol. 664 2001.
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AB - Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm 2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

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