CW Argon-ion laser crystallization of a-Si: H thin films

A. Sunda-Meya; D. Gracin; J. Dutta; B. Vlahovic; Robert Nemanich

CW Argon-ion laser crystallization of a-Si: H thin films

A. Sunda-Meya, D. Gracin, J. Dutta, B. Vlahovic, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm ². The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	M Stutzmann, J Boyce, J D Cohen, R Collins, J Hanna
Volume	664
State	Published - 2001
Externally published	Yes
Event	Amorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001

Other

Other	Amorphous and Heterogeneous Silicon Based Films 2001
Country/Territory	United States
City	San Francisco, CA
Period	4/16/01 → 4/20/01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{1f14cc7555f149a9a78a80aaf93fc0c7,

title = "CW Argon-ion laser crystallization of a-Si: H thin films",

abstract = "Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm 2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm. ",

author = "A. Sunda-Meya and D. Gracin and J. Dutta and B. Vlahovic and Robert Nemanich",

year = "2001",

language = "English (US)",

volume = "664",

editor = "M Stutzmann and J Boyce and Cohen, {J D} and R Collins and J Hanna",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Amorphous and Heterogeneous Silicon Based Films 2001 ; Conference date: 16-04-2001 Through 20-04-2001",

}

TY - GEN

T1 - CW Argon-ion laser crystallization of a-Si

T2 - Amorphous and Heterogeneous Silicon Based Films 2001

AU - Sunda-Meya, A.

AU - Gracin, D.

AU - Dutta, J.

AU - Vlahovic, B.

AU - Nemanich, Robert

PY - 2001

Y1 - 2001

N2 - Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm 2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

AB - Thin a-Si:H films, with a thickness of 1 μm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm 2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.

UR - http://www.scopus.com/inward/record.url?scp=0035556403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035556403&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0035556403

VL - 664

BT - Materials Research Society Symposium - Proceedings

A2 - Stutzmann, M

A2 - Boyce, J

A2 - Cohen, J D

A2 - Collins, R

A2 - Hanna, J

Y2 - 16 April 2001 through 20 April 2001

ER -

CW Argon-ion laser crystallization of a-Si: H thin films

Abstract

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ASJC Scopus subject areas

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