Current effects on high magnetic field resonances in a dot array

L. H. Lin; N. Aoki; K. Nakao; Y. Ochiai; F. Ge; A. Andresen; C. Prasad; J. P. Bird; D. K. Ferry; K. Ishibashi; Y. Aoyagi; T. Sugano

doi:10.1006/spmi.2000.0835

Current effects on high magnetic field resonances in a dot array

L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, F. Ge, A. Andresen, C. Prasad, J. P. Bird, D. K. Ferry, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In recent studies of disordered quantum dot arrays, it was found that a re-entrant metal-insulator transition occurs in these structures as the gate voltage is varied, even though there is no change in carrier density or disorder. Here, we study resonances that appear with the quantum Hall effect in these dot arrays. Several resonances are observed on the side of the plateaus, which may be due either to charging of isolated islands or to transmission resonances in the quantum point contacts. Heating of the carriers causes these peaks to decrease with an energy relaxation time comparable to that of the dots themselves.

Original language	English (US)
Pages (from-to)	327-330
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0835
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0835

Cite this

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title = "Current effects on high magnetic field resonances in a dot array",

abstract = "In recent studies of disordered quantum dot arrays, it was found that a re-entrant metal-insulator transition occurs in these structures as the gate voltage is varied, even though there is no change in carrier density or disorder. Here, we study resonances that appear with the quantum Hall effect in these dot arrays. Several resonances are observed on the side of the plateaus, which may be due either to charging of isolated islands or to transmission resonances in the quantum point contacts. Heating of the carriers causes these peaks to decrease with an energy relaxation time comparable to that of the dots themselves.",

author = "Lin, {L. H.} and N. Aoki and K. Nakao and Y. Ochiai and F. Ge and A. Andresen and C. Prasad and Bird, {J. P.} and Ferry, {D. K.} and K. Ishibashi and Y. Aoyagi and T. Sugano",

note = "Funding Information: Acknowledgements—This work was supported in part by the Office of Naval Research and by the NSF/JSPS joint international science program.; 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

year = "2000",

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doi = "10.1006/spmi.2000.0835",

language = "English (US)",

volume = "27",

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journal = "Superlattices and Microstructures",

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TY - JOUR

T1 - Current effects on high magnetic field resonances in a dot array

AU - Lin, L. H.

AU - Aoki, N.

AU - Nakao, K.

AU - Ochiai, Y.

AU - Ge, F.

AU - Andresen, A.

AU - Prasad, C.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Sugano, T.

N1 - Funding Information: Acknowledgements—This work was supported in part by the Office of Naval Research and by the NSF/JSPS joint international science program.

PY - 2000/5

Y1 - 2000/5

N2 - In recent studies of disordered quantum dot arrays, it was found that a re-entrant metal-insulator transition occurs in these structures as the gate voltage is varied, even though there is no change in carrier density or disorder. Here, we study resonances that appear with the quantum Hall effect in these dot arrays. Several resonances are observed on the side of the plateaus, which may be due either to charging of isolated islands or to transmission resonances in the quantum point contacts. Heating of the carriers causes these peaks to decrease with an energy relaxation time comparable to that of the dots themselves.

AB - In recent studies of disordered quantum dot arrays, it was found that a re-entrant metal-insulator transition occurs in these structures as the gate voltage is varied, even though there is no change in carrier density or disorder. Here, we study resonances that appear with the quantum Hall effect in these dot arrays. Several resonances are observed on the side of the plateaus, which may be due either to charging of isolated islands or to transmission resonances in the quantum point contacts. Heating of the carriers causes these peaks to decrease with an energy relaxation time comparable to that of the dots themselves.

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DO - 10.1006/spmi.2000.0835

M3 - Conference article

AN - SCOPUS:0034187533

SN - 0749-6036

VL - 27

SP - 327

EP - 330

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Current effects on high magnetic field resonances in a dot array

Abstract

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