TY - GEN
T1 - Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe
AU - Rojsatien, Srisuda
AU - Walker, Trumann
AU - Nietzold, Tara
AU - Lai, Barry
AU - Colegrove, Eric
AU - Stuckelberger, Michael
AU - Kanakkithodi, Arun K.M.
AU - Chan, Maria
AU - Bertoni, Mariana
N1 - Funding Information:
This material is based on the work supported by the Department of Energy under contracts DE-EE-0008163 and DE-EE-0008754.
Funding Information:
ACKNOWLEDGMENT This material is based on the work supported by the Department of Energy under contracts DE-EE-0008163 and DE-EE-0008754. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the Department of Energy. Work at the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU2Te phase and CuCdmay be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.
AB - For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU2Te phase and CuCdmay be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.
KW - CdTe
KW - CuxTe XANES
KW - FEFF9
KW - XBIC
UR - http://www.scopus.com/inward/record.url?scp=85099556171&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85099556171&partnerID=8YFLogxK
U2 - 10.1109/PVSC45281.2020.9300779
DO - 10.1109/PVSC45281.2020.9300779
M3 - Conference contribution
AN - SCOPUS:85099556171
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1547
EP - 1551
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -