Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe

Srisuda Rojsatien, Trumann Walker, Tara Nietzold, Barry Lai, Eric Colegrove, Michael Stuckelberger, Arun K.M. Kanakkithodi, Maria Chan, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU2Te phase and CuCdmay be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1547-1551
Number of pages5
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • CdTe
  • CuxTe XANES
  • FEFF9
  • XBIC

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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