TY - GEN
T1 - Crystalline silicon passivation with amorphous silicon carbide layers
AU - Boccard, Mathieu
AU - Jackson, Alec
AU - Holman, Zachary
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g. forcing the use of low-temperature silver pastes). We previously evidenced the superior temperature stability of low-carbon-content intrinsic amorphous silicon carbide (a-SiCx:H) passivating layers to sidestep this issue, and investigate here in more details the reason for the improved temperature stability. The passivation from intrinsic a-SiCx:H layers is shown to first improved upon annealing, and then degrade past 350 °C. The initial passivation can be improved and the degradation postponed by capping the a-SiCx:H layer by an a-Si:H film. We compare here the passivation provided by stacks of a-Si:H and a-SiCx:H, and investigate the hydrogen bonding and content of these films.
AB - Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g. forcing the use of low-temperature silver pastes). We previously evidenced the superior temperature stability of low-carbon-content intrinsic amorphous silicon carbide (a-SiCx:H) passivating layers to sidestep this issue, and investigate here in more details the reason for the improved temperature stability. The passivation from intrinsic a-SiCx:H layers is shown to first improved upon annealing, and then degrade past 350 °C. The initial passivation can be improved and the degradation postponed by capping the a-SiCx:H layer by an a-Si:H film. We compare here the passivation provided by stacks of a-Si:H and a-SiCx:H, and investigate the hydrogen bonding and content of these films.
KW - amorphous silicon
KW - amorphous silicon carbide
KW - hydrogen
KW - passivation
KW - temperature stability
UR - http://www.scopus.com/inward/record.url?scp=85003698318&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85003698318&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2016.7749800
DO - 10.1109/PVSC.2016.7749800
M3 - Conference contribution
AN - SCOPUS:85003698318
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1179
EP - 1181
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -