@inproceedings{6a973c5166e545d4ac025b75b5256264,
title = "Crystalline perfection of epitaxial structure: Correlation with composition, thickness, and elastic strain of epitaxial layers",
abstract = "Crystalline perfection of InGaN epi-layers is the missing design parameter for InGaN solar cells. Structural deterioration of InGaN epi-layers depends on the thickness, composition and growth conditions as well. Increasing the InGaN epi-layer thickness beyond a critical point introduces extended crystalline defects that hinder the optical absorption and electrical properties. Increasing the InGaN composition further reduces this critical layer thickness. The optical absorption band edge is sharp for III-nitride direct band gap materials. The band edge profile is deteriorated by creation of extended crystalline defects in the InGaN epitaxial material. The design of InGaN solar cells requires the growth of epi-layers where a trade off between crystalline perfection and optical absorption properties is reached.",
author = "Jampana, {Balakrishnam R.} and Faleev, {Nikolai N.} and Ferguson, {Ian T.} and Opila, {Robert L.} and Christiana Honsberg",
year = "2009",
language = "English (US)",
isbn = "9781605111407",
series = "Materials Research Society Symposium Proceedings",
pages = "71--76",
booktitle = "Compound Semiconductors for Energy Applications and Environmental Sustainability",
note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",
}