Crystal structure of low-resistance Au-Ni/p-GaN contacts

H. Omiya, S. Srinivasan, Fernando Ponce, S. Tanaka, H. Marui, T. Mukai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The atomic arrangement of Ni-Au contacts on p-type GaN has been studied by transmission electron microscopy. A sharp transition between GaN and Au is observed, with no intermediate phases present. Lattice parameter measurements of the Au layer reveal that the Au layer is fully relaxed. The epitaxial relationship between the Au layer and the GaN film is (111)Au//(0002)GaN, [110]Au//[1120]GaN. Careful analysis of lattice images indicates that Au is directly in contact with Ga on p-GaN. Ni, which is used primarily as a wetting later, is not present at the interface. The separation between Ga and Au atoms at the interface was found to be 2.5Å. Comparison of experimental and calculated images gives a best match for the interface separation obtained by TEM that corresponds to covalent Ga bonded to metallic Au, with a bond length of 2.5 Å.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages421-422
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Omiya, H., Srinivasan, S., Ponce, F., Tanaka, S., Marui, H., & Mukai, T. (2005). Crystal structure of low-resistance Au-Ni/p-GaN contacts. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 421-422). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994165