CRYSTAL SITE LOCATION OF DOPANTS IN SEMICONDUCTORS USING A 100-keV ELECTRON PROBE.

J. Tafto, John Spence

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si(3 multiplied by 10**1**9 As atoms cm** minus **3). The authors report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.

Original languageEnglish (US)
Pages (from-to)5014-5015
Number of pages2
JournalJournal of Applied Physics
Volume54
Issue number9
DOIs
StatePublished - Sep 1983

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crystals
electrons
x rays
impurities
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

CRYSTAL SITE LOCATION OF DOPANTS IN SEMICONDUCTORS USING A 100-keV ELECTRON PROBE. / Tafto, J.; Spence, John.

In: Journal of Applied Physics, Vol. 54, No. 9, 09.1983, p. 5014-5015.

Research output: Contribution to journalArticle

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