Crystal site location of dopants in semiconductors using a 100-keV electron probe

J. Tafto; John Spence

doi:10.1063/1.332769

Crystal site location of dopants in semiconductors using a 100-keV electron probe

J. Tafto, John Spence

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si (3×10¹⁹ As atoms cm^-3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.

Original language	English (US)
Pages (from-to)	5014-5015
Number of pages	2
Journal	Journal of Applied Physics
Volume	54
Issue number	9
DOIs	https://doi.org/10.1063/1.332769
State	Published - 1983

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.332769

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title = "Crystal site location of dopants in semiconductors using a 100-keV electron probe",

abstract = "The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si (3×1019 As atoms cm-3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.",

author = "J. Tafto and John Spence",

year = "1983",

doi = "10.1063/1.332769",

language = "English (US)",

volume = "54",

pages = "5014--5015",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Crystal site location of dopants in semiconductors using a 100-keV electron probe

AU - Tafto, J.

AU - Spence, John

PY - 1983

Y1 - 1983

N2 - The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si (3×1019 As atoms cm-3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.

AB - The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si (3×1019 As atoms cm-3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.

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U2 - 10.1063/1.332769

DO - 10.1063/1.332769

M3 - Article

AN - SCOPUS:0020824264

SN - 0021-8979

VL - 54

SP - 5014

EP - 5015

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Crystal site location of dopants in semiconductors using a 100-keV electron probe

Abstract

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