Crystal site location of dopants in semiconductors using a 100-keV electron probe

J. Tafto, John Spence

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Abstract

The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si (3×1019 As atoms cm-3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.

Original languageEnglish (US)
Pages (from-to)5014-5015
Number of pages2
JournalJournal of Applied Physics
Volume54
Issue number9
DOIs
StatePublished - Dec 1 1983

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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