Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells

J. C. Brooksby, J. Mei, Fernando Ponce

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A direct correlation has been established between the spatial variation of spectral luminescence and the distribution of threading dislocations in a green-light-emitting InGaN quantum well structure grown on a sapphire substrate. Transmission electron microscopy and monochromatic cathodoluminescence images, taken from the same region, indicate that the nature of the quantum well emission is influenced by the microstructure of the underlying GaN. The microstructure is defined by threading dislocations that reflect a columnar structure with low-angle grain boundaries. A strong correlation is observed between this microstructure and the peak and low-energy portion of the quantum well luminescence, with threading dislocations as boundaries between bright and darker regions. The high-energy portion of the luminescence is localized and is generally complementary to the rest of the spectrum.

Original languageEnglish (US)
Article number231901
JournalApplied Physics Letters
Volume90
Issue number23
DOIs
StatePublished - 2007

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quantum wells
luminescence
microstructure
cathodoluminescence
sapphire
grain boundaries
transmission electron microscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells. / Brooksby, J. C.; Mei, J.; Ponce, Fernando.

In: Applied Physics Letters, Vol. 90, No. 23, 231901, 2007.

Research output: Contribution to journalArticle

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