Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

Y. Wang, G. N. Ali, M. K. Mikhov, V. Vaidyanathan, Brian Skromme, B. Raghothamachar, M. Dudley

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

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Physics & Astronomy