Correlating defect band luminesce to elemental distribution by X-ray fluorescence

Mariana Bertoni, S. Bernardini, S. Johnston, M. Al-Jassim, B. Lai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different stages of processing have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), where collected for the entire silicon wafers. Interestingly, a reversal of the subPL intensity in various regions of the wafer is observed right after the deposition of the anti-reflective coating (ARC). Regions with low subPL intensity before ARC exhibit high subPL intensity afterwards, and the opposite holds true for other regions of the wafer. Some authors have performed high-resolution cathodoluminesce spectroscopy, EBIC and dark lock-in-thermography to elucidate the origin of this phenomenon, In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3470-3472
Number of pages3
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Energy gap
Fluorescence
Photoluminescence
X rays
Defects
Reflective coatings
Silicon wafers
Monocrystalline silicon
Imaging techniques
Processing
Metals
Spectroscopy
Impurities

Keywords

  • multicrystalline silicon
  • Photoluminescence
  • PL band reversal
  • sub-band PL
  • X-ray fluorescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bertoni, M., Bernardini, S., Johnston, S., Al-Jassim, M., & Lai, B. (2014). Correlating defect band luminesce to elemental distribution by X-ray fluorescence. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 3470-3472). [6925679] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925679

Correlating defect band luminesce to elemental distribution by X-ray fluorescence. / Bertoni, Mariana; Bernardini, S.; Johnston, S.; Al-Jassim, M.; Lai, B.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 3470-3472 6925679.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bertoni, M, Bernardini, S, Johnston, S, Al-Jassim, M & Lai, B 2014, Correlating defect band luminesce to elemental distribution by X-ray fluorescence. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925679, Institute of Electrical and Electronics Engineers Inc., pp. 3470-3472, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925679
Bertoni M, Bernardini S, Johnston S, Al-Jassim M, Lai B. Correlating defect band luminesce to elemental distribution by X-ray fluorescence. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 3470-3472. 6925679 https://doi.org/10.1109/PVSC.2014.6925679
Bertoni, Mariana ; Bernardini, S. ; Johnston, S. ; Al-Jassim, M. ; Lai, B. / Correlating defect band luminesce to elemental distribution by X-ray fluorescence. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 3470-3472
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