TY - GEN
T1 - Correlating defect band luminesce to elemental distribution by X-ray fluorescence
AU - Bertoni, Mariana
AU - Bernardini, S.
AU - Johnston, S.
AU - Al-Jassim, M.
AU - Lai, B.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different stages of processing have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), where collected for the entire silicon wafers. Interestingly, a reversal of the subPL intensity in various regions of the wafer is observed right after the deposition of the anti-reflective coating (ARC). Regions with low subPL intensity before ARC exhibit high subPL intensity afterwards, and the opposite holds true for other regions of the wafer. Some authors have performed high-resolution cathodoluminesce spectroscopy, EBIC and dark lock-in-thermography to elucidate the origin of this phenomenon, In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.
AB - Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different stages of processing have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), where collected for the entire silicon wafers. Interestingly, a reversal of the subPL intensity in various regions of the wafer is observed right after the deposition of the anti-reflective coating (ARC). Regions with low subPL intensity before ARC exhibit high subPL intensity afterwards, and the opposite holds true for other regions of the wafer. Some authors have performed high-resolution cathodoluminesce spectroscopy, EBIC and dark lock-in-thermography to elucidate the origin of this phenomenon, In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.
KW - PL band reversal
KW - Photoluminescence
KW - X-ray fluorescence
KW - multicrystalline silicon
KW - sub-band PL
UR - http://www.scopus.com/inward/record.url?scp=84912143004&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912143004&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925679
DO - 10.1109/PVSC.2014.6925679
M3 - Conference contribution
AN - SCOPUS:84912143004
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 3470
EP - 3472
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -