Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO2 interface

Jinman Yang, L. De La Garza, Trevor Thornton, Michael Kozicki, D. Gust

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

An overview is given on results from a hybrid molecular/MOSFET that is sensitive to the presence of molecular layers attached to its surface. Numerical simulations of the device suggest that the shift in threshold voltage of the device after attachment of the molecular layer is due to protonation of the native oxide, and this is explained in terms of the greater acidity of the caboxylic acid.

Original languageEnglish (US)
Pages (from-to)1706-1709
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - Jul 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: Jan 6 2002Jan 10 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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