Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO2 interface

Jinman Yang; L. De La Garza; Trevor Thornton; Michael Kozicki; D. Gust

doi:10.1116/1.1491543

Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO₂ interface

Jinman Yang, L. De La Garza, Trevor Thornton, Michael Kozicki, D. Gust

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

An overview is given on results from a hybrid molecular/MOSFET that is sensitive to the presence of molecular layers attached to its surface. Numerical simulations of the device suggest that the shift in threshold voltage of the device after attachment of the molecular layer is due to protonation of the native oxide, and this is explained in terms of the greater acidity of the caboxylic acid.

Original language	English (US)
Pages (from-to)	1706-1709
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491543
State	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1491543

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Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO₂ interface. / Yang, Jinman; De La Garza, L.; Thornton, Trevor et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1706-1709.

Research output: Contribution to journal › Conference article › peer-review

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AU - Kozicki, Michael

AU - Gust, D.

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AB - An overview is given on results from a hybrid molecular/MOSFET that is sensitive to the presence of molecular layers attached to its surface. Numerical simulations of the device suggest that the shift in threshold voltage of the device after attachment of the molecular layer is due to protonation of the native oxide, and this is explained in terms of the greater acidity of the caboxylic acid.

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Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO₂ interface

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