We have used low-energy electron microscopy to study spontaneous step formation in "striped" domains on ultraflat Si(001)-(2×1) surfaces during B2H6 exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 μm) single-domain striped regions with adjustable stripe widths.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 3 2001|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)