Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

J. F. Nielsen, J. P. Pelz, H. Hibino, C. W. Hu, I. S T Tsong, John Kouvetakis

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have used low-energy electron microscopy to study spontaneous step formation in "striped" domains on ultraflat Si(001)-(2×1) surfaces during B2H6 exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 μm) single-domain striped regions with adjustable stripe widths.

Original languageEnglish (US)
Pages (from-to)3857-3859
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number23
DOIs
StatePublished - Dec 3 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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