Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

J. F. Nielsen; J. P. Pelz; H. Hibino; C. W. Hu; I. S T Tsong; John Kouvetakis

doi:10.1063/1.1421084

Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

J. F. Nielsen, J. P. Pelz, H. Hibino, C. W. Hu, I. S T Tsong, John Kouvetakis

Molecular Sciences, School of (SMS)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have used low-energy electron microscopy to study spontaneous step formation in "striped" domains on ultraflat Si(001)-(2×1) surfaces during B₂H₆ exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 μm) single-domain striped regions with adjustable stripe widths.

Original language	English (US)
Pages (from-to)	3857-3859
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	23
DOIs	https://doi.org/10.1063/1.1421084
State	Published - Dec 3 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1421084

Cite this

@article{dd8e19119066446eb771bee3b2c8d9df,

title = "Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure",

abstract = "We have used low-energy electron microscopy to study spontaneous step formation in {"}striped{"} domains on ultraflat Si(001)-(2×1) surfaces during B2H6 exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 μm) single-domain striped regions with adjustable stripe widths.",

author = "Nielsen, {J. F.} and Pelz, {J. P.} and H. Hibino and Hu, {C. W.} and Tsong, {I. S T} and John Kouvetakis",

year = "2001",

month = dec,

day = "3",

doi = "10.1063/1.1421084",

language = "English (US)",

volume = "79",

pages = "3857--3859",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

AU - Nielsen, J. F.

AU - Pelz, J. P.

AU - Hibino, H.

AU - Hu, C. W.

AU - Tsong, I. S T

AU - Kouvetakis, John

PY - 2001/12/3

Y1 - 2001/12/3

N2 - We have used low-energy electron microscopy to study spontaneous step formation in "striped" domains on ultraflat Si(001)-(2×1) surfaces during B2H6 exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 μm) single-domain striped regions with adjustable stripe widths.

AB - We have used low-energy electron microscopy to study spontaneous step formation in "striped" domains on ultraflat Si(001)-(2×1) surfaces during B2H6 exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 μm) single-domain striped regions with adjustable stripe widths.

UR - http://www.scopus.com/inward/record.url?scp=0035803207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035803207&partnerID=8YFLogxK

U2 - 10.1063/1.1421084

DO - 10.1063/1.1421084

M3 - Article

AN - SCOPUS:0035803207

SN - 0003-6951

VL - 79

SP - 3857

EP - 3859

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this